Abstract:Abstract Recent theoretical predictions of ferroelectricity in two-dimensional (2D) van der Waals materials reveal exciting possibilities for their use in scalable low-power electronic devices with polarization-dependent functionalities. These prospects have been further invigorated by the experimental evidence of the polarization response in some transition metal chalcogenides (TMCs)—a group of narrow-band semiconductors and semimetals with a wealth of application potential. Among the TMCs, molybdenum disulfide (MoS 2 ) is known as one of the most promising and robust 2D electronic materials. However, in spite of theoretical predictions, no ferroelectricity has been experimentally detected in MoS 2 , while the emergence of this property could enhance its potential for electronics applications. Here, we report the experimental observation of a stable room-temperature out-of-plane polarization ordering in 2D MoS 2 layers, where polarization switching is realized by mechanical pressure induced by a tip of a scanning probe microscope. Using this approach, we create the bi-domain polarization states, which exhibit different piezoelectric activity, second harmonic generation, surface potential, and conductivity. Ferroelectric MoS 2 belongs to the distorted trigonal structural 1T” phase, where a spontaneous polarization is inferred by its P 3 m 1 space-group symmetry and corroborated by theoretical modeling. Experiments on the flipped flakes reveal that the 1T”-MoS 2 samples consist of the monolayers with randomly alternating polarization orientation, which form stable but switchable “antipolar” head-to-head or tail-to-tail dipole configurations. Mechanically written domains are remarkably stable facilitating the application of 1T”-MoS 2 in flexible memory and electromechanical devices.

Strain-Engineered Ferroelectricity in 2H Bilayer MoS 2

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Direct observation of ferroelectricity in two-dimensional MoS2

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Strain-engineering the Schottky barrier and electrical transport on MoS2

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Strain-induced ferromagnetism and magneto-electric coupling in two-dimensional ferroelectric ZnIn2S4

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

Out-of-Plane Ferroelectricity in Two-Dimensional 1T′′′-MoS 2 Above Room Temperature

Strain-induced semiconductor to metal transition in MA2Z4 bilayers

Strain-shear coupling in bilayer MoS2

Elucidating Piezoelectricity and Strain in Monolayer MoS 2 at the Nanoscale Using Kelvin Probe Force Microscopy

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Strain-engineered rippling at the bilayer-MoS2 interface identified by advanced atomic force microscopy

Strain-Enhanced Mobility of Monolayer MoS2

Engineering the Strain and Interlayer Excitons of 2D Materials via Lithographically Engraved Hexagonal Boron Nitride

Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice

Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides