Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Elucidating Piezoelectricity and Strain in Monolayer MoS 2 at the Nanoscale Using Kelvin Probe Force Microscopy

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

Enhanced Electromechanical Response Due to Inhomogeneous Strain in Monolayer MoS 2

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Optical detection of strain and doping inhomogenieties in single layer MoS2

Monitoring Strain-Controlled Exciton-Phonon Coupling in Layered MoS2 by Circularly Polarized Light

Strain-Engineered Ferroelectricity in 2H Bilayer MoS 2

Direct X-Ray Measurements of Strain in Monolayer MoS$_{2}$ from Capping Layers and Geometrical Features

Probing Local Strain at Mx2-Metal Boundaries with Surface Plasmon-Enhanced Raman Scattering

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Strain Engineering in Monolayer WS2 and WS2 Nanocomposites

In situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Out-of-Plane Electromechanical Response of Monolayer Molybdenum Disulfide Measured by Piezoresponse Force Microscopy

Strain-engineering the Schottky barrier and electrical transport on MoS2

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Dynamic Structural Response and Deformations of Monolayer $MoS_{2}$ Visualized by Femtosecond Electron Diffraction

Monolayer MoS$_2$ Strained to 1.3\% with a Microelectromechanical System

Strongly Enhanced Electronic Bandstructure Renormalization by Light in Nanoscale Strained Regions of Monolayer MoS$_2$/Au(111) Heterostructures

Electronic transport modulation on few-layers suspended MoS$_2$ under strain