Abstract:Abstract Recent theoretical predictions of ferroelectricity in two-dimensional (2D) van der Waals materials reveal exciting possibilities for their use in scalable low-power electronic devices with polarization-dependent functionalities. These prospects have been further invigorated by the experimental evidence of the polarization response in some transition metal chalcogenides (TMCs)—a group of narrow-band semiconductors and semimetals with a wealth of application potential. Among the TMCs, molybdenum disulfide (MoS 2 ) is known as one of the most promising and robust 2D electronic materials. However, in spite of theoretical predictions, no ferroelectricity has been experimentally detected in MoS 2 , while the emergence of this property could enhance its potential for electronics applications. Here, we report the experimental observation of a stable room-temperature out-of-plane polarization ordering in 2D MoS 2 layers, where polarization switching is realized by mechanical pressure induced by a tip of a scanning probe microscope. Using this approach, we create the bi-domain polarization states, which exhibit different piezoelectric activity, second harmonic generation, surface potential, and conductivity. Ferroelectric MoS 2 belongs to the distorted trigonal structural 1T” phase, where a spontaneous polarization is inferred by its P 3 m 1 space-group symmetry and corroborated by theoretical modeling. Experiments on the flipped flakes reveal that the 1T”-MoS 2 samples consist of the monolayers with randomly alternating polarization orientation, which form stable but switchable “antipolar” head-to-head or tail-to-tail dipole configurations. Mechanically written domains are remarkably stable facilitating the application of 1T”-MoS 2 in flexible memory and electromechanical devices.

Direct observation of ferroelectricity in two-dimensional MoS2

Out-of-Plane Ferroelectricity in Two-Dimensional 1T‴-Mos2 above Room Temperature

Out-of-Plane Ferroelectricity in Two-Dimensional 1T′′′-MoS 2 Above Room Temperature

Toward Ferroelectric Control of Monolayer MoS2

Vapor Deposition of Bilayer 3R MoS2 with Room‐Temperature Ferroelectricity

Excitonic signatures of ferroelectric order in parallel-stacked MoS2

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Excitonic signatures of ferroelectric order in parallel-stacked MoS$_2$

Ferroelectricity in untwisted heterobilayers of transition metal dichalcogenides

Strain-Engineered Ferroelectricity in 2H Bilayer MoS 2

Electrostatic Modulation and Mechanism of the Electronic Properties of Monolayer MoS 2 via Ferroelectric BiAlO 3 (0001) Polar Surfaces

Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer

Ferroelectric Domain Control of Nonlinear Light Polarization in MoS2 via PbZr0.2Ti0.8O3 Thin Films and Free‐Standing Membranes

Intrinsic Ferromagnetic Semiconductivity Realized in a New MoS2 Monolayer

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Cation Ordering Induced Two-Dimensional Vertical Ferroelectricity in Tungsten and Molybdenum Trioxides

Non-volatile electrical polarization switching via domain wall release in 3R-MoS$_2$ bilayer

Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS$_2$ bulk crystals

Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect

Two-dimensional ferroelasticity in van der Waals β’-In2Se3

Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors