Abstract:Strain engineering plays an important role in tuning the microstructure and properties of heterostructures. The key to implement the strain modulation to heterostructures is controlling the strain relaxation, which is generally realized by varying the thickness of thin films or changing substrates. Here, we show that interface polarity can tailor the behavior of strain relaxation in a hexagonal manganite film, whose strain state can be tuned to different extents. Using scanning transmission electron microscopy, a reconstructed atomic layer with elongated interlayer spacing and minor in-plane rotation is observed at the interface, suggesting that the bond hierarchy at interface transits from three-dimension to two-dimension, which accounts for the strain-free heteroepitaxy. Utilizing interface polarity to control the strain relaxation highlights a conceptually opt route to optimize the strain engineering and the realization of strain-free heteroepitaxy in such highly lattice-mismatched heterostructure also provides possibility to transform more bulklike functional oxides to low dimensionality.Figure S1–S12. . The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.1c01938.Figure S1, rocking curves of two heterostructures; Figure S2, element analysis of the interfacial area; Figure S3, lattice-constant measurement; Figure S4, interlayer spcaing at the interfacial area; Figure S5, atomic density of the blurry layer; Figure S6, structural distortion near the interface to screen the bound charge; Figures S7 and S8, signals of oxygen K edge at the interfacial area of two heterostructures; Figures S9 and S10, determining the difference of oxygen vacancy in two heterostructures by diffraction pattern and EELS analysis; Figure S11, determining the oxygen position with Gaussian fitting; Figure S12, analysis of interface polarity according to the polar compensation mechanism (PDF)This article has not yet been cited by other publications.

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