Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Large-Scale Ultrafast Strain Engineering of CVD-Grown Two-Dimensional Materials on Strain Self-Limited Deformable Nanostructures toward Enhanced Field-Effect Transistors

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Nanoimprint-induced strain engineering of two-dimensional materials

Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Strain lithography for two-dimensional materials by electron irradiation

Deep Elastic Strain Engineering of 2D Materials and Their Twisted Bilayers

Thermomechanical Nanostraining of Two-Dimensional Materials

Noncontacting Optostriction Driven Anisotropic and Inhomogeneous Strain in Two-Dimensional Materials

Strain‐Engineered 2D Materials: Challenges, Opportunities, and Future Perspectives

Towards efficient strain engineering of 2D materials: A four-points bending approach for compressive strain

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic and Optical Properties

Experimental Nanomechanics of 2D Materials for Strain Engineering

Strain Engineering 2D MoS$_{2}$ with Thin Film Stress Capping Layers

Tunable Optoelectronic Properties of WS$_2$ by Local Strain Engineering and Folding

Optical Strain Engineering Enables Dynamic Spatial Control of 2D Nanomaterial Properties

Carrier mobility tuning of MoS2 by strain engineering in CVD growth process

Strain engineering and lattice vibration manipulation of atomically thin TaS2 films