Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Structure and bandgap evolution of chromium selenide epitaxially grown on Au(111): From CrSe2 to Cr2Se3

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Phase Transition of single-layer vanadium diselenide on Au(111) with distinguished electronic structures

Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy

Growth of wafer-scale chromium sulphide and selenide semiconductor films

Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations

Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides

Se-concentration dependent superstructure transformations of CuSe monolayer on Cu(111) substrate

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Structural and Magnetic Properties of Molecular Beam Epitaxy Grown Chromium Selenide Thin Films

Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

Epitaxial Synthesis of Monolayer PtSe2 Single Crystal on MoSe2 with Strong Interlayer Coupling

A new alloy for Al-chalcogen system: AlSe surface alloy on Al (111)

Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure

Electronic properties of polymorphic two-dimensional layered chromium disulphide

Reversible structural transition of two-dimensional copper selenide on Cu(111)

2D Selenium Allotropes from First Principles and Swarm Intelligence.

Identifying the Non-Identical Outermost Selenium Atoms and Invariable Band Gaps Across the Grain Boundary of Anisotropic Rhenium Diselenide

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2