Abstract:Compared with the two-dimensional atomic crystal materials whose bulk phase is layered originally, the related research of two-dimensional material crystals whose bulk phase is non-layered is still very scarce. The monolayer CuSe studied in this paper belongs to the latter, which is a new honeycomb graphene analogue. Monolayer CuSe is not suitable for application in electronic devices because of its metallic nature. In order to find new two-dimensional atomic crystal materials with excellent performance suitable for application in electronic devices, in this paper, the change of CuSe from metal to semiconductor is realized by external atom modification. The first principle of density functional theory is used to study the energy band structure of monolayer CuSe after adding second periodic atoms at the top, center and bridge sites. The electronic structure of monolayer CuSe with Li and B atoms, including energy band structure, the density of states, differential charge density and crystal orbital Hamiltonian population analysis. The results show that after the addition of Li atom, the transition of CuSe from metallic to semiconductive can be realized at all three positions, and Li atom is more inclined to be modified at the hexagonal center of CuSe, with band gap of about 1.77eV, the Fermi level is biased towards the top of the valence band and exhibits a p-type semiconductor property, and is a direct bandgap semiconductor; Adding B atom at the top of Cu atom can also make CuSe semiconductive, with band gap of about 1.2eV, the conduction band minimum is at the K point, and the valence band maximum is at the Γ point. It belongs to an indirect band gap semiconductor, and the Fermi energy level is biased towards the conduction band minimum, exhibiting the characteristics of an n-type semiconductor. According to the results of differential charge density and crystal orbital Hamiltonian population, the B atom is bound to the top of the monolayer CuSe with the B-Se polar covalent bond. The first principle reveals the realization of metal-to-semiconductor transition from monolayer CuSe to CuXSe (X=Li, B), and the calculation results make it possible to use CuSe in future electronic devices.

A new alloy for Al-chalcogen system: AlSe surface alloy on Al (111)

New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111)

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Preferential Substitution of Selenium along the Grain Boundaries in Monolayer MoS 2(1- x ) Se 2 x Alloy

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Semiconducting Chalcogenide Alloys Based on the (Ge, Sn, Pb) (S, Se, Te) Formula with Outstanding Properties: A First-Principles Calculation Study

Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations

Alloying behavior of wide band gap alkaline-earth chalcogenides

Structure and bandgap evolution of chromium selenide epitaxially grown on Au(111): From CrSe2 to Cr2Se3

Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS 2(1‐ x ) Se 2 x /SnS 2(1‐ y ) Se 2 y Heterostructures

Electronic Properties and Carrier Dynamics at the Alloy Interfaces of WS 2 x Se 2−2 x Spiral Nanosheets

Valence Band Structure of Chalcogenide Obtained by X‐Ray Photoelectron Spectroscopy and Etching Technique

Surface modification of XSe (X = Cu and Ag) monolayers by grope 1 elements: A metal to semiconductor transition by a first-principles perspective

Inhomogeneous Composition Distribution in Monolayer Transition Metal Dichalcogenide Alloys

Alloyed (Znse)(x)(cuinse2)(1-X) and CuInSe(x)S(2-x) Nanocrystals with a Monophase Zinc Blende Structure over the Entire Composition Range.

2D Selenium Allotropes from First Principles and Swarm Intelligence.

(Invited) ALD of FeSe2, CoSe2, and NiSe2

Synthesis of 2D MoS2(1- x)Se2 x semiconductor alloy by chemical vapor deposition

Surface modification of CuSe:a first-principles study