Abstract:Compared with the two-dimensional atomic crystal materials whose bulk phase is layered originally, the related research of two-dimensional material crystals whose bulk phase is non-layered is still very scarce. The monolayer CuSe studied in this paper belongs to the latter, which is a new honeycomb graphene analogue. Monolayer CuSe is not suitable for application in electronic devices because of its metallic nature. In order to find new two-dimensional atomic crystal materials with excellent performance suitable for application in electronic devices, in this paper, the change of CuSe from metal to semiconductor is realized by external atom modification. The first principle of density functional theory is used to study the energy band structure of monolayer CuSe after adding second periodic atoms at the top, center and bridge sites. The electronic structure of monolayer CuSe with Li and B atoms, including energy band structure, the density of states, differential charge density and crystal orbital Hamiltonian population analysis. The results show that after the addition of Li atom, the transition of CuSe from metallic to semiconductive can be realized at all three positions, and Li atom is more inclined to be modified at the hexagonal center of CuSe, with band gap of about 1.77eV, the Fermi level is biased towards the top of the valence band and exhibits a p-type semiconductor property, and is a direct bandgap semiconductor; Adding B atom at the top of Cu atom can also make CuSe semiconductive, with band gap of about 1.2eV, the conduction band minimum is at the K point, and the valence band maximum is at the Γ point. It belongs to an indirect band gap semiconductor, and the Fermi energy level is biased towards the conduction band minimum, exhibiting the characteristics of an n-type semiconductor. According to the results of differential charge density and crystal orbital Hamiltonian population, the B atom is bound to the top of the monolayer CuSe with the B-Se polar covalent bond. The first principle reveals the realization of metal-to-semiconductor transition from monolayer CuSe to CuXSe (X=Li, B), and the calculation results make it possible to use CuSe in future electronic devices.

Surface modification of CuSe:a first-principles study

Surface modification of XSe (X = Cu and Ag) monolayers by grope 1 elements: A metal to semiconductor transition by a first-principles perspective

First‐Principles Investigation of Electronic and Thermodynamic Properties of Honeycomb CuSe

Structural characterizations and electronic properties of CuSe monolayer endowed with triangular nanopores

Epitaxial Growth of Honeycomb Monolayer CuSe with Dirac Nodal Line Fermions

Nanopore-patterned CuSe drives the realization of PbSe-CuSe lateral heterostructure

First-principles Study of Copper Contamination in Silicon Semiconductor

Se-concentration dependent superstructure transformations of CuSe monolayer on Cu(111) substrate

Effects of Graphene/BN Encapsulation, Surface Functionalization and Molecular Adsorption on the Electronic Properties of Layered InSe: A First-Principles Study

First-principles Study on the Electronic and Magnetic Properties of Monolayer FeSe on Cu3N(001)

Electronic properties of monolayer copper selenide with one-dimensional moiré patterns

Van Der Waals Epitaxial Growth of Atomically Thin Bi2se3 and Thickness-Dependent Topological Phase Transition

First-principle Study of New Phase of Layered Bi2Se3

Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations

Structural Diversity And Electronic Properties Of Cu2snx3 (X = S, Se): A First-Principles Investigation

Designing novel monolayer and multilayer h-CSe crystals with tunable photoelectric properties

Electronic and magnetic properties of dopant atoms in SnSe monolayer: a first-principles study

Designing high-efficiency electrode contacts to two-dimensional semiconductor Cu 2 Se

First-principle study of new phase of layered Bi<sub>2</sub>Se<sub>3</sub>

First-principles Study the Single-Layer Transition Metal Trihalide CrXSe3 (X = Sn, Ge, Si) As Monolayer Ferromagnetic Semiconductor.

Metastable tetragonal Cu2Se hyperbranched structures: large-scale preparation and tunable electrical and optical response regulated by phase conversion.