Abstract:We study the electronic surface states of the semiconducting alloy BiSb. Using a phenomenological tight binding model we show that the Fermi surface of the 111 surface states encloses an odd number of time reversal invariant momenta (TRIM) in the surface Brillouin zone confirming that the alloy is a strong topological insulator. We then develop general arguments which show that spatial symmetries lead to additional topological structure, and further constrain the surface band structure. Inversion symmetric crystals have 8 Z_2 "parity invariants", which include the 4 Z_2 invariants due to time reversal. The extra invariants determine the "surface fermion parity", which specifies which surface TRIM are enclosed by an odd number of electron or hole pockets. We provide a simple proof of this result, which provides a direct link between the surface states and the bulk parity eigenvalues. We then make specific predictions for the surface state structure for several faces of BiSb. We next show that mirror invariant band structures are characterized by an integer "mirror Chern number", n_M. The sign of n_M in the topological insulator phase of BiSb is related to a previously unexplored Z_2 parameter in the L point k.p theory of pure Bi, which we refer to as the "mirror chirality", \eta. The value of \eta predicted by the tight binding model for Bi disagrees with the value predicted by a more fundamental pseudopotential calculation. This explains a subtle disagreement between our tight binding surface state calculation and previous first principles calculations on Bi. This suggests that the tight binding parameters in the Liu Allen model of Bi need to be reconsidered. Implications for existing and future ARPES experiments and spin polarized ARPES experiments will be discussed.

Observation of Dirac-like surface state bands on the top surface of BiSe

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Surface States On A Topologically Nontrivial Semimetal: The Case Of Sb(110)

Direct observation of band bending in topological insulator Bi2Se3

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

Emergence of a weak topological insulator from the Bi$_x$Se$_y$ family and the observation of weak anti-localization

Anomalies in the electronic structure of Bi(2)Se(3)

Surface States of the Topological Insulator Bi_{1-x}Sb_x

Proximity-effect-induced Superconducting Gap in Topological Surface States - A Point Contact Spectroscopy Study of NbSe2/Bi2Se3 Superconductor-Topological Insulator Heterostructures

Observation of optical absorption correlated with surface state of topological insulator

Band structure of Bi surfaces formed on Bi2Se3 upon exposure to air

Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

Oscillatory Surface Dichroism Of The Insulating Topological Insulator Bi2te2se

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Topological surface states hybridized with bulk states of Bi-doped PbSb2Te4 revealed in quasiparticle interference

Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.