Abstract:Alloys of ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ and ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}\phantom{\rule{4pt}{0ex}}[{({\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x})}_{2}{\mathrm{Te}}_{3}]$ have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,${\mathrm{Sb})}_{2}{\mathrm{Te}}_{3}$ thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is $x\ensuremath{\sim}0.7$, but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds $n$-type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the $x\ensuremath{\sim}0.7$ sample shows great similarity to pristine ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$. This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state dispersion, and quasiparticle lifetime in (${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$)${}_{2}{\mathrm{Te}}_{3}$.

Surface States Scattering from A Step Defect in the Topological Insulator Bi2te3

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Electronic standing waves on the surface of the topological insulator Bi2Te3

Elastic scattering of surface states on three-dimensional topological insulators

Electron States Scattering off Line Edges on the Surface of Topological Insulator

Impact of Step Defects on Surface States of Topological Insulators

Surface-step Defect in Three-Dimensional Topological Insulators: Electric Manipulation of Spin and Quantum Spin Hall Effect

Electrical resistance of individual defects at a topological insulator surface

Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Spin-flop transition and Zeeman effect of defect-localized bound states in the antiferromagnetic topological insulator MnBi2Te4

Electronic Structure Near an Impurity and Terrace on the Surface of A Three-Dimensional Topological Insulator

Magnetism-induced Massive Dirac Spectra and Topological Defects in the Surface State of Cr-doped Bi2Se3-bilayer Topological Insulators

Bulk and surface electron scattering in disordered Bi$_{2}$Te$_{3}$ probed by quasiparticle interference

Unoccupied Topological Surface State in Bi2te2se

Power-Law Decay of Standing Waves on the Surface of Topological Insulators

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Role of Defects in the Carrier-Tunable Topological-Insulator (Bi1-Xsbx)(2)te-3 Thin Films

Anti-site defect-induced disorder in compensated topological magnet MnBi$_{2-x}$Sb$_x$Te$_4$

Role of Defects in the Carrier-Tunable Topological-Insulator (bi[subscript 1 − X]sb[subscript X])[subscript 2]te[subscript 3] Thin Films