Abstract:The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi$_{2-x}$Sb$_x$Te$_4$ (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating states. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and doping levels. The large number of possible defect configurations in MBST make studying the influence of individual defects virtually impossible. Here, we present a statistical analysis of the nanoscale effect of defects in MBST with $x=0.64$, by scanning tunneling microscopy/spectroscopy (STM/S). We identify (Bi,Sb)$_{\rm Mn}$ anti-site defects to be the main source of the observed doping fluctuations, leading towards the formation of nanoscale charge puddles and effectively closing the transport gap. Our findings will guide further optimization of this material system via defect engineering, to enable exploitation of its promising properties.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **The influence of disorder caused by antisite defects on the Dirac surface states in the compensated topological magnet MnBi₂₋ₓSbₓTe₄ (MBST), especially how these defects affect the quantum phase transition and transport properties of the material**. Specifically, the researchers focus on: 1. **The influence of antisite defects on the electronic structure**: - The antisite defects in MnBi₂₋ₓSbₓTe₄ (such as (Bi,Sb)Mn and Mn(Bi/Sb) antisite defects) will lead to local doping fluctuations, thus forming nanoscale charge puddles, which will close the transport gap. - Through scanning tunneling microscopy/spectroscopy (STM/S) experiments, the researchers found that these antisite defects are the main source of doping fluctuations, especially when x = 0.64, that is, when the Sb substitution amount reaches the optimal compensation state. 2. **The ways to optimize material properties**: - The researchers hope that by understanding the specific influence of these defects on the electronic structure, they can guide future material optimization work, for example, reducing doping fluctuations through defect engineering, thereby stabilizing the quantum phase transition and achieving a wider transport gap. - These optimizations are crucial for realizing the application of MnBi₂₋ₓSbₓTe₄ in strange quantum phenomena such as the quantum anomalous Hall effect (QAH) and axion insulator state. ### Formula summary - **Dirac cone dispersion relation**: \[ E_{\pm}(k)=E_D\pm\sqrt{(\hbar v_F k)^2+\Delta^2} \] where $E_D$ is the Dirac point energy, $v_F$ is the Fermi velocity, and $\Delta$ is the magnetic exchange gap. - **Valence band and conduction band edges**: \[ E_{VB}=E_D - \Delta \] \[ E_{CB}=E_D+\Delta \] - **Average exchange gap**: \[ \tilde{\Delta}=\frac{E_{CB}-E_{VB}}{2} \] - **Linear fitting formula**: \[ E_{CB}=E_{VB}+56\text{ meV} \] \[ \Delta(E_D)= - 0.061\cdot E_D+23\text{ meV} \] Through these studies, the authors hope to provide guidance for future research to achieve more robust quantum phase transitions and transport properties.

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