Abstract:Magnetic topological insulators (TIs) herald a wealth of applications in spin-based technologies, relying on the novel quantum phenomena provided by their topological properties. Particularly promising is the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ layered family of established intrinsic magnetic TIs that can flexibly realize various magnetic orders and topological states. High tunability of this material platform is enabled by manganese-pnictogen intermixing, whose amounts and distribution patterns are controlled by synthetic conditions. Positive implication of the strong intermixing in MnSb$_2$Te$_4$ is the interlayer exchange coupling switching from antiferromagnetic to ferromagnetic, and the increasing magnetic critical temperature. On the other side, intermixing also implies atomic disorder which may be detrimental for applications. Here, we employ nuclear magnetic resonance and muon spin spectroscopy, sensitive local probe techniques, to scrutinize the impact of the intermixing on the magnetic properties of (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ and MnSb$_2$Te$_4$. Our measurements not only confirm the opposite alignment between the Mn magnetic moments on native sites and antisites in the ground state of MnSb$_2$Te$_4$, but for the first time directly show the same alignment in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ with n = 0, 1 and 2. Moreover, for all compounds, we find the static magnetic moment of the Mn antisite sublattice to disappear well below the intrinsic magnetic transition temperature, leaving a homogeneous magnetic structure undisturbed by the intermixing. Our findings provide a microscopic understanding of the crucial role played by Mn-Bi intermixing in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ and offer pathways to optimizing the magnetic gap in its surface states.

Antisite-Defects Control of Magnetic Properties in MnSb 2 Te 4

High Concentration Intrinsic Defects in MnSb2Te4

Tuning the magnetism and band topology through antisite defects in Sb doped MnBi4Te7

Site Mixing for Engineering Magnetic Topological Insulators

Anti-site defect-induced disorder in compensated topological magnet MnBi$_{2-x}$Sb$_x$Te$_4$

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4 and MnBi4Te7 by Defect Engineering and Chemical Doping

On the Role of Defects in the Electronic Structure of MnBi$_{2-x}$Sb$_x$Te$_4$

Intrinsic and extrinsic dopings in epitaxial films MnBi<sub>2</sub>Te<sub>4</sub>

Intrinsic and extrinsic dopings in epitaxial films MnBi2Te4

Delicate Ferromagnetism in MnBi$_6$Te$_{10}$

Ubiquitous order-disorder transition in the Mn antisite sublattice of the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ magnetic topological insulators

Ubiquitous Order-Disorder Transition in the Mn Antisite Sublattice of the (MnBi2Te4)(Bi2Te3)n Magnetic Topological Insulators

Spin-flop transition and Zeeman effect of defect-localized bound states in the antiferromagnetic topological insulator MnBi2Te4

Crystal and magnetic structures of magnetic topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$

The modulation of magnetism and charge carrier in magnetic topological insulator MnBi4Te7 by Pb and Sb co-doping

Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in the Intrinsic Magnetic Topological Insulator MnBi4Te7

Irremovable Mn-Bi Site Mixing in MnBi2Te4.

Topological phase transition in layered magnetic compound MnSb2Te4: Spin-orbit coupling and interlayer coupling dependeces

Multiple Magnetic Topological Phases in Bulk van der Waals Crystal MnSb 4 Te 7

Realizing Gapped Surface States in the Magnetic Topological Insulator MnBi2−xSbxTe4

Irremovable Mn-Bi Site Mixing in MnBi 2 Te 4