Abstract:Alloys of ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ and ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}\phantom{\rule{4pt}{0ex}}[{({\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x})}_{2}{\mathrm{Te}}_{3}]$ have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,${\mathrm{Sb})}_{2}{\mathrm{Te}}_{3}$ thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is $x\ensuremath{\sim}0.7$, but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds $n$-type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the $x\ensuremath{\sim}0.7$ sample shows great similarity to pristine ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$. This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state dispersion, and quasiparticle lifetime in (${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$)${}_{2}{\mathrm{Te}}_{3}$.

Defects and High Bulk Resistivities in the Bi-rich Tetradymite Topological Insulator Bi2+xTe2−xSe

Identifying Native Point Defects in the Topological Insulator Bi 2 Te 3

Identifying Native Point Defects in the Topological Insulator Bi2Te3.

Bulk contribution to magnetotransport properties of low defect-density Bi$_2$Te$_3$ topological insulator thin films

Defect Role in the Carrier Tunable Topological Insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Thin Films

Low-carrier-concentration Crystals of the Topological Insulator Bi2Te2Se

Thermoelectric Properties of Bi 2 Te 2 Se Compensated by Native Defects and Sn Doping

Defect Engineering of Bi2SeO2 Thermoelectrics

Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$

Defect Structure Regulation and Thermoelectric Transfer Performance in N-Type Bi2-xSbxTe3-ySey-based Compounds

Intrinsic Topological Insulator Bi 1.5 Sb 0.5 Te 3-x Se x Thin Crystals

Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping

Role of Defects in the Carrier-Tunable Topological-Insulator (Bi1-Xsbx)(2)te-3 Thin Films

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4 and MnBi4Te7 by Defect Engineering and Chemical Doping

Bulk conducting states of intrinsically doped Bi$_2$Se$_3$

Evolution of atomic structure and electronic transport properties in n-type Bi 2 Te 3 films via Bi 2 planar defects

Research of Defect Structure Regulation and Thermoelectric Performance in n-Type Bi 2-x Sb x Te 3-y Se y -Based Compounds

On the Role of Defects in the Electronic Structure of MnBi$_{2-x}$Sb$_x$Te$_4$

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

Role of Defects in the Carrier-Tunable Topological-Insulator (bi[subscript 1 − X]sb[subscript X])[subscript 2]te[subscript 3] Thin Films

The role of interstitial native defects in the topological insulator Bi2Se3