Abstract:We successfully identified native point defects that occur in Bi2Te3 crystals by combining high-resolution bias-dependent scanning tunneling microscopy and density functional theory based calculations. As-grown Bi2Te3 crystals contain vacancies, antisites, and interstitial defects that may result in bulk conductivity and therefore may change the insulating bulk character. Here, we demonstrate the interplay between the growth conditions and the density of different types of native near-surface defects. In particular, scanning tunneling spectroscopy reveals the dependence on not only the local atomic environment but also on the growth kinetics and the resulting sample doping from n-type toward intrinsic crystals with the Fermi level positioned inside the energy gap. Our results establish a bias-dependent STM signature of the Bi2Te3 native defects and shed light on the link between the native defects and the electronic properties of Bi2Te3, which is relevant for the synthesis of topological insulator materials and the related functional properties.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c04861?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c04861</a>.Bias-dependent STM topographies of Bi2Te3 native defects, bias-dependent simulated STM images of Bi2Te3 native defects not observed in the experiments, additional STM topographies presenting the observed mobility of Bi adatoms, table presenting the densities of the native defects, additional DFT-based calculations of the doping character of the native defects, and the DFT-based calculated electronic band structure of Bi2Te3 for 1 up to 18 QLs (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c04861/suppl_file/nn0c04861_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

The role of interstitial native defects in the topological insulator Bi2Se3

First-principles study of native point defects in Bi2Se3

Identifying Native Point Defects in the Topological Insulator Bi2Te3.

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Bulk conducting states of intrinsically doped Bi$_2$Se$_3$

Identifying Native Point Defects in the Topological Insulator Bi 2 Te 3

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Spontaneous ferromagnetism and finite surface energy gap in the topological insulator Bi$_2$Se$_3$ from surface Bi$_\rm{Se}$ antisite defects

Defects and High Bulk Resistivities in the Bi-rich Tetradymite Topological Insulator Bi2+xTe2−xSe

Native Defects and Substitutional Impurities in Two-Dimensional Monolayer Inse

Native Point Defects of Semiconducting Layered Bi2O2Se

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Pressure Induced Topological Phase Transition in Layered Bi2S3

Native Pb vacancy defects induced p-type characteristic in epitaxial monolayer PbSe

On the Role of Defects in the Electronic Structure of MnBi$_{2-x}$Sb$_x$Te$_4$

Defect Engineering of Bi2SeO2 Thermoelectrics

Origin of N-Type Conductivity in Two-Dimensional InSe: in Atoms from Surface Adsorption and Van Der Waals Gap

Structural Defects And Electronic Properties Of The Cu-Doped Topological Insulator Bi2se3

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi2Te4 and MnBi4Te7 by Defect Engineering and Chemical Doping