Abstract:Bi 2 Te 3 -based compounds are the best performing thermoelectric materials near room temperature. The presence of numerous complex defects renders defect engineering as the core stratagem for modulating and improving the thermoelectric performance.Therefor rationally understanding and effectively controlling the existence form and concentration of defects are crucial for achieving high-thermoelectric performance in Bi 2 Te 3 -based alloys.Herein, a series of Cl doped n-type quaternary Bi 2-x Sb x Te 3-y Se y compounds were synthesized by zone-melting method. The correlation between defect evolution process and thermoelectric performance were systematically investigated by first-principles calculation and experiments.Alloying Sb on Bi site and Se on Te site induce charged structural defects, leading to a significant change in the carrier concentration.For Bi 2-x Sb x Te 2.994 Cl 0.006 compounds, alloying Sb on Bi site decreases the formation energy of the S b Te 2 antisite defect,which generates the antisite defect SbTe 2 and accompanies with the increase of the minority carrier concentration from 2.09×10 16 cm -3 to 3.99×10 17 cm -3 .The increase of the minority carrier severely deteriorates the electrical transport properties. In contrast, alloying Se in the Bi 1.8 Sb 0.2 Te 2.994-y Se y Cl 0.006 compounds significantly lowers the formation energy of the complex defect S e Te + S b Bi ,which becomes more energetically favorable and suppresses the formation of the antisite defect SbTe 2. As a result,the concentration of minority carriers decreases to 1.46×10 16 cm -3 .This eliminates the deterioration effect of the minority carrier on the electrical transport properties of the material and greatly boosts the power factor.A maximum power factor of 4.49 mW m-1 K-2 is achieved for Bi 1.8 Sb 0.2 Te 2.944 Se 0.05 Cl 0.006 compound at room temperature.In conjunction with the reduced thermal conductivity by intensified phonon scattering via alloying Sb and Se, the maximum ZT value of 0.98 is attained for Bi 1.8 Sb 0.2 Te 2.844 Se 0.15 Cl 0.006 compound at room temperature.Our finding provides an important guidance for modulating point defects, carrier concentration, and thermoelectric performance in Bi 2 Te 3 -based compounds with complex compositions.

Defect Structure Regulation and Thermoelectric Transfer Performance in N-Type Bi2-xSbxTe3-ySey-based Compounds

Research of Defect Structure Regulation and Thermoelectric Performance in n-Type Bi 2-x Sb x Te 3-y Se y -Based Compounds

Cu Interstitials Enable Carriers and Dislocations for Thermoelectric Enhancements in N-Pbte0.75se0.25

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

Mediating Point Defects Endows N-Type Bi2 Te3 with High Thermoelectric Performance and Superior Mechanical Robustness for Power Generation Application.

Synergistic optimization of the thermoelectric performance of BiSbSe3 using doping and multi-scale defect engineering

Enhancing Thermoelectric Performance of N-Type Hot Deformed Bismuth-Telluride-Based Solid Solutions by Nonstoichiometry-Mediated Intrinsic Point Defects.

Achieving N- and P-Type Thermoelectric Materials with the Identical Chemical Composition BiSbTe1.5Se1.5 by Defect Structure Engineering

Integrating band engineering with point defect scattering for high thermoelectric performance in Bi2Si2Te6

Point Defect Engineering of High‐Performance Bismuth‐Telluride‐Based Thermoelectric Materials

Enhancing room-temperature thermoelectric performance of n-type Bi2Te3-based alloys via sulfur alloying

Thermoelectric Performance of P-Type Zone-Melted Se-doped Bi 0.5 Sb 1.5 Te 3 Alloys

Defect Engineering of Bi2SeO2 Thermoelectrics

Simultaneous Regulation of Electrical and Thermal Transport Properties of N-Type Bi2Te3 Via Adding Excessive Te Followed by Se Doping

Vacancy-Based Defect Regulation for High Thermoelectric Performance in Ge9Sb2Te12-x Compounds

Vacancy Manipulation by Ordered Mesoporous Induced Optimal Carrier Concentration and Low Lattice Thermal Conductivity in BixSb2- xTe3 Yielding Superior Thermoelectric Performance

Removing the Oxygen-Induced Donor-like Effect for High Thermoelectric Performance in n-Type Bi 2 Te 3 -Based Compounds

Evolution of the Intrinsic Point Defects in Bismuth Telluride-Based Thermoelectric Materials

Anionic regulation and valence band convergence boosting the thermoelectric performance of Se-alloyed GeSb 2 Te 4 single crystal

Enhancing thermoelectric performance of Sb2Te3 through swapped bilayer defects

Enhancing Thermoelectric Performance of AgSbTe 2 -Based Compounds via Microstructure Modulation Combining with Entropy Engineering