Abstract:Topological insulators are exotic states of matter that show quantum-Hall-like behaviour in the absence of a magnetic field. Surface states in such systems are protected against scattering and are thought to provide an avenue for the realization of fault-tolerant quantum computing. Experiments now reveal the observation of such a topological state of matter in Bi2Se3, a naturally occurring stoichiometric material with a simple surface-state structure and a bulk energy gap larger than kBT at room temperature. Recent experiments and theories have suggested that strong spin–orbit coupling effects in certain band insulators can give rise to a new phase of quantum matter, the so-called topological insulator, which can show macroscopic quantum-entanglement effects1,2,3,4,5,6,7. Such systems feature two-dimensional surface states whose electrodynamic properties are described not by the conventional Maxwell equations but rather by an attached axion field, originally proposed to describe interacting quarks8,9,10,11,12,13,14,15. It has been proposed that a topological insulator2 with a single Dirac cone interfaced with a superconductor can form the most elementary unit for performing fault-tolerant quantum computation14. Here we present an angle-resolved photoemission spectroscopy study that reveals the first observation of such a topological state of matter featuring a single surface Dirac cone realized in the naturally occurring Bi2Se3 class of materials. Our results, supported by our theoretical calculations, demonstrate that undoped Bi2Se3 can serve as the parent matrix compound for the long-sought topological device where in-plane carrier transport would have a purely quantum topological origin. Our study further suggests that the undoped compound reached via n-to-p doping should show topological transport phenomena even at room temperature.

Topological Dirac Surface States in Ternary Compounds GeBi 2 Te 4 ,snbi 2 Te 4 and Sn 0.571 Bi 2.286 Se 4

Topological Dirac surface states in ternary compounds GeBi<sub>2</sub>Te<sub>4</sub>, SnBi<sub>2</sub>Te<sub>4</sub> and Sn<sub>0.571</sub>Bi<sub>2.286</sub>Se<sub>4</sub> *

Topological Surface States and Dirac Point Tuning in Ternary Topological Insulators

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Direct Evidence For The Dirac-Cone Topological Surface States In The Ternary Chalcogenide Tlbise2

Single Dirac Cone Topological Surface State and Unusual Thermoelectric Property of Compounds from a New Topological Insulator Family

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface

Unoccupied Topological States on Bismuth Chalcogenides

Rhombohedral Sb 2 Se 3 As an Intrinsic Topological Insulator Due to Strong Van Der Waals Inter-Layer Coupling

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

A computational investigation of topological insulator Bi2Se3 film

The rhombohedral Sb2Se3 is also an intrinsic topological insulator

Massive Dirac Surface States in Topological Insulator/magnetic Insulator Heterostructures

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

Two Pairs of Topological Shockley Surface Bands in the Ternary Compound SnSb2Te4

Topological Insulators at Room Temperature