Abstract:Binary bismuth chalcogenides Bi$_2$Se$_3$, Bi$_2$Te$_3$, and related materials are currently being extensively investigated as the reference topological insulators (TIs) due to their simple surface-state band dispersion (single Dirac cone) and relatively large bulk band gaps. Nanostructures of TIs are of particular interest as an increased surface-to-volume ratio enhances the contribution of surfaces states, meaning they are promising candidates for potential device applications. So far, the vast majority of research efforts have focused on the low-energy (0001) surfaces, which correspond to natural cleavage planes in these layered materials. However, the surfaces of low-dimensional nanostructures (nanoplatelets, nanowires, nanoribbons) inevitably involve higher-index facets. We perform a systematic ab initio investigation of the surfaces of bismuth chalcogenide TI nanostructures characterized by different crystallographic orientations, atomic structures and stoichiometric compositions. We find several stable terminations of high-index surfaces, which can be realized at different values of the chemical potential of one of constituent elements. For the uniquely defined stoichiometric termination, the topological Dirac fermion states are shown to be strongly anisotropic with a clear dependence of Fermi velocities and spin polarization on the surface orientation. Self-doping effects and the presence of topologically trivial mid-gap states are found to characterize the non-stoichiometric surfaces. The results of our study pave the way towards experimental control of topologically protected surface states in bismuth chalcogenide nanostructures.

Topological Dirac surface states in ternary compounds GeBi<sub>2</sub>Te<sub>4</sub>, SnBi<sub>2</sub>Te<sub>4</sub> and Sn<sub>0.571</sub>Bi<sub>2.286</sub>Se<sub>4</sub> *

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Single Dirac Cone Topological Surface State and Unusual Thermoelectric Property of Compounds from a New Topological Insulator Family

Direct Evidence For The Dirac-Cone Topological Surface States In The Ternary Chalcogenide Tlbise2

Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Atomic Distributions in Topological Insulator Bi$_2$Se$_{3-x}$Te$_x$

Large Gap Topological Insulator Bi2Te3 with a Single Dirac Cone on the Surface

Unoccupied Topological States on Bismuth Chalcogenides

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

First-Principles Studies of the Three-Dimensional Strong Topological Insulators Bi2te3, Bi2se3 and Sb2te3

Band Structure Engineering in (Bi(1-X)sb(x))(2)te(3) Ternary Topological Insulators.

The rhombohedral Sb2Se3 is also an intrinsic topological insulator

Topological Insulators at Room Temperature

Dirac fermions at high-index surfaces of bismuth chalcogenide topological insulator nanostructures

A computational investigation of topological insulator Bi2Se3 film

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

(111) Surface States of SnTe

On the topological surface states of the intrinsic magnetic topological insulator Mn-Bi-Te family

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Topological Surface Dirac Fermion in BiTeCl-Based Heterostructures