Abstract:Topological insulators (TIs) are bulk insulators with unusual gapless metallic surface states protected by time reversal symmetry. The topological surface states are expected to yield unique phenomena, such as spin-momentum locking and the suppression of non-magnetic backscattering. The surface states with a Dirac cone like dispersion relation have been observed directly using Angle-resolved photoemission spectroscopy (ARPES). Their signatures in electrical transport properties have also been reported although the transport behaviors are complicated by the fact that the samples often have dominating conduction from bulk channels due to high carriers density from impurity states. It is theoretically predicted that the surface states are robust against strong disorders, but it has not been tested experimentally. Bi2Te3, a member of the Bi2Se3 family, has been demonstrated to be a promising candidate of 3D topological insulators. In this work, various transport studies have been carried out on Bi2Te3 nanotubes with strong disorders. As essentially narrow gap semiconductors with band gaps of 100 to 300 meV, the Bi2Se3 family often have conducting bulk due to impurity doping and lattice imperfection, such as vacancies, dislocations, and defects. Several approaches have been applied to reduce bulk conductivity. The first one is to compensate bulk carriers by chemical doping or field effect, which drags Fermi level back to bang gap. Another is to fabricate nano-scale samples with enhanced surface-to-volume ratio, and effectively reduce the weight of bulk conduction. In our work we have prepared Bi2Te3 nanotubes by solution phase method utilizing Kirkendall effect. Due to the nature of this process, polycrystalline Bi2Te3 nanotubes form with extremely strong disorders. In this way, bulk carriers are strongly localized and the samples are brought from a heavily doped band semiconductor to the regime of Anderson insulator. We have demonstrated that the bulk conductance of the nanotubes is truly insulating and characterized by Mott Variable Range Hopping (VRH) mechanism. Despite the strongly disordered bulk channel, Aharonov-Bohm (AB) like oscillations in magnetoconductance have been observed on the nanotubes at low temperatures. The conductance oscillations differ from those on either ballistic or diffusive normal metals. With the combination of theoretical analysis and simulations, we show that these oscillations originate from the outer surface states of the nanotubes. Their behaviors are consistent with the prediction of the “anomalous AB effect” of topological surface states. In comparison with published work on clean TIs, we provide a direct demonstration of the fundamental aspect of topological surface states, namely their robustness to time-reversal invariant disorder. The interplay between a TI and a superconductor (SC) is another interesting topic to explore the exotic behaviors of topological surface states. For example, proximity induced superconductivity on topological insulators leads to the new phase of…

Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Electrical Transport Studies Of Topological Insulator Bi2te3 Nanotubes

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Understanding the Finite Size and Surface Relaxation Effects on the Surface States of Bi2Se3 Family Topological Insulators

Robustness of Topological Surface States Against Strong Disorder Observed in Bi2te3 Nanotubes

Emergence of Bulk Band Inversion in the Nanodomain and Relaxation Effects on the Surface States of the Bi2Se3 Topological Insulator Family

Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se

Coherent topological transport on the surface of Bi₂Se₃

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Ambipolar surface state transport in non-metallic stoichiometric Bi$_2$Se$_3$ crystals

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Imaging current distribution in a topological insulator Bi2Se3 in the presence of competing surface and bulk contributions to conductivity

Robustness of Topological Order and Formation of Quantum Well States in Topological Insulators Exposed to Ambient Environment

Topological Surface State Evolution in Bi 2 Se 3 via Surface Etching

Role of Defects in the Carrier-Tunable Topological-Insulator (Bi1-Xsbx)(2)te-3 Thin Films

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Bulk transport properties of Bismuth selenide thin films approaching the two-dimensional limit