Chemical-Potential-Dependent Gap Opening At The Dirac Surface States Of Bi2se3 Induced By Aggregated Substitutional Cr Atoms

Cui-Zu Chang,Peizhe Tang,Yi-Lin Wang,Xiao Feng,Kang Li,Zuocheng Zhang,Yayu Wang,Li-Li Wang,Xi Chen,Chaoxing Liu,Wenhui Duan,Ke He,Xucun Ma.,Qi-Kun Xue
DOI: https://doi.org/10.1103/PhysRevLett.112.056801
IF: 8.6
2014-01-01
Physical Review Letters
Abstract:With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which, however, show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron-doping level. Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order.
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