Abstract:The exploration initiated by the discovery of the topological insulator (BixSb1−x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi0.4Sb0.6)2Te3 (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM) analyses. The existence of a Cr dopant has been identified with a reduction in the lattice parameter of BST from 30.53 ± 0.05 to 30.06 ± 0.04 Å confirmed by X-ray diffraction, and the valence state of Cr verified by X-ray photoemission (XPS) at binding energies of ~573.1 and ~583.5 eV. Additionally, the influence of Cr doping on lattice vibration was qualitatively examined by Raman spectroscopy, revealing a blue shift in peaks with increased Cr concentration. Surface characteristics, crucial for the functionality of topological insulators, were explored via Atomic Force Microscopy (AFM), illustrating a sevenfold reduction in surface roughness as the Cr concentration increased from 0 to 0.1. The ferromagnetic properties of Cr:BST were examined by a superconducting quantum interference device (SQUID) with a magnetic field applied in out-of-plane and in-plane directions. The Cr:BST samples exhibited a Curie temperature (Tc) above 50 K, accompanied by increased magnetization and coercivity with increasing Cr doping levels. The introduction of the Cr dopant induces a transition from n-type ((Bi0.4Sb0.6)2Te3) to p-type (Cr:(Bi0.4Sb0.6)2Te3) carriers, demonstrating a remarkable suppression of carrier density up to one order of magnitude, concurrently enhancing carrier mobility up to a factor of 5. This pivotal outcome is poised to significantly influence the development of QAHE studies and spintronic applications.

Electronic structure and x-ray magnetic circular dichroism in cr-doped topological insulator bi2se3

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

Magnetically Doped Semiconducting Topological Insulators

Surface Electronic Structure of Cr Doped Bi2Se3 Single Crystals

Magnetism-induced Massive Dirac Spectra and Topological Defects in the Surface State of Cr-doped Bi2Se3-bilayer Topological Insulators

Local Atomic and Electronic Structures in Ferromagnetic Topological Insulator Cr-Doped (Bixsb1-X)(2)te-3 Studied by Xafs and Ab Initio Calculations

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

ELECTRONIC STRUCTURES AND MAGNETIC PROPERTIES OF RARE-EARTH (Sm,Gd) DOPED Bi2Se3

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Local Structures Around 3d Metal Dopants in Topological Insulator Bi2se3 Studied by Exafs Measurements

Engineering Topological Surface States of Cr-Doped Bi2Se3 Films by Spin Reorientation and Electric Field

Impurity band assisted carrier relaxation in Cr doped topological insulator Bi 2 Se 3

Tailoring Magnetic Doping in the Topological Insulator Bi2Se3

Impurity Band Assisted Carrier Relaxation in Cr Doped Topological Insulator Bi2Se3

Influence of Doping on the Topological Surface States of Crystalline Bi2Se3 Topological Insulators

77Se NMR Investigation of Fe-doped Bi2Se3

Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3

Structural Defects And Electronic Properties Of The Cu-Doped Topological Insulator Bi2se3

Dirac States of 2D Topological Insulators: Effect of Heterovalent Dopant-Content