Enhancing Magnetic Ordering in Cr-doped Bi2Se3 Using High-TC Ferrimagnetic Insulator

Wenqing Liu,Liang He,Yongbing Xu,Koichi Murata,Mehmet C. Onbasli,Murong Lang,Nick J. Maltby,Shunpu Li,Xuefeng Wang,Caroline A. Ross,Peter Bencok,Gerrit Van Der Laan,Rong Zhang,Kang. L. Wang
DOI: https://doi.org/10.1021/nl504480g
IF: 10.8
2014-01-01
Nano Letters
Abstract:We report a study of enhancing the magnetic ordering in a model magnetically doped topological insulator (TI), Bi(2-x)Cr(x)Se(3), via the proximity effect using a high-TC ferrimagnetic insulator Y(3)Fe(5)O(12). The FMI provides the TI with a source of exchange interaction yet without removing the nontrivial surface state. By performing the elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally observed an enhanced TC of 50 K in this magnetically doped TI/FMI heterostructure. We have also found a larger (6.6 nm at 30 K) but faster decreasing (by 80% from 30 to 50 K) penetration depth compared to that of diluted ferromagnetic semiconductors (DMSs), which could indicate a novel mechanism for the interaction between FMIs and the nontrivial TIs surface.
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