Abstract:Recently, the quantum spin-Hall edge channels of two-dimensional colloidal nanocrystals of the topological insulator Bi$_2$Se$_3$ were observed directly. Motivated by this development, we reconsider the four-band effective model which has been traditionally employed in the past to describe thin nanosheets of this material. Derived from a three-dimensional $\boldsymbol{k} \boldsymbol{\cdot} \boldsymbol{p}$ model, it physically describes the top and bottom electronic surface states at the $\Gamma$ point that become gapped due to the material's small thickness. However, we find that the four-band model for the surface states alone, as derived directly from the three-dimensional theory, is inadequate for the description of thin films of a few quintuple layers and even yields an incorrect topological invariant within a significant range of thicknesses. To address this limitation we propose an eight-band model which, in addition to the surface states, also incorporates the set of bulk states closest to the Fermi level. We find that the eight-band model not only captures most of the experimental observations, but also agrees with previous first-principles calculations of the $\mathbb{Z}_{2}$ invariant in thin films of varying thickness. The band inversion around the $\Gamma$ point, which endows the surface-like bands with topology, is shown to be enabled by the presence of the additional bulk-like states without requiring any reparametrization of the resulting effective Hamiltonian.

What problem does this paper attempt to address?

The paper primarily focuses on the study of two-dimensional nanosheets of the three-dimensional topological insulator Bi₂Se₃, aiming to address the following core issues: 1. **Limitations of the Four-Band Model**: The traditionally used four-band effective model for describing Bi₂Se₃ nanosheets is inadequate when it comes to describing films with a thickness of only a few quintuple layers (QLs), particularly resulting in erroneous outcomes in the calculation of topological invariants. 2. **Inconsistency between Theoretical and Experimental Results**: There is a significant discrepancy between the theoretical predictions based on the four-band model and the first-principles calculations, as well as the recent direct observations of quantum spin Hall (QSH) edge states in Bi₂Se₃ nanosheets with finite lateral dimensions. To address these issues, the authors propose a new eight-band model that not only includes surface states but also incorporates the set of bulk states closest to the Fermi level. This improved model can better describe the experimental observations and is consistent with previous first-principles calculation results, especially within the thickness range of several QLs, indicating that the new eight-band model can more accurately capture the topological properties of the material. By analyzing the topological characteristics of the eight-band model, the authors demonstrate that the band inversion near the Γ point is driven by additional bulk states rather than parameter reconstruction. This band inversion endows the surface states with topological properties. Furthermore, the authors verify that the topological properties of the eight-band model align with the results obtained from first-principles calculations and are consistent with the latest experimental results. In summary, this paper aims to address the limitations of the traditional four-band model in describing ultrathin Bi₂Se₃ nanosheets by introducing an improved eight-band model, which can more accurately reflect the topological properties of the material.

Topology of Bi$_2$Se$_3$ nanosheets

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Low-energy modeling of three-dimensional topological insulator nanostructures

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Topological phases of topological insulator thin films

Coherent topological transport on the surface of Bi₂Se₃

A computational investigation of topological insulator Bi2Se3 film

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Surface conduction and pi-bonds in graphene and topological insulator Bi2Se3

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Topological Surface State Evolution in Bi2Se3 via Surface Etching

Emergence of Bulk Band Inversion in the Nanodomain and Relaxation Effects on the Surface States of the Bi2Se3 Topological Insulator Family

Observation of Dirac-like surface state bands on the top surface of BiSe

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets