Abstract:Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

Lateral Topological Crystalline Insulator Heterostructure

Two-dimensional Square Transition Metal Dichalcogenides with Lateral Heterostructures

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Two-Dimensional Ferroelastic Topological Insulators in Single-Layer Janus Transition Metal Dichalcogenides MSSe (M=Mo, W)

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures

Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers

Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers

Robust topological interface states in a lateral magnetic-topological heterostructure

Tunable Magnetic and Electronic Properties of CrS2/VS2 Lateral Superlattices

Electric‐Field‐Modulated Topological Phase Transition in AlSb/InSe Heterobilayers

Diverse electronic and magnetic properties of CrS2 enabling strain-controlled 2D lateral heterostructure spintronic devices

Diverse electronic and magnetic properties of CrS2 enabling novel strain-controlled 2D lateral heterostructure spintronic devices

Design of Lateral Heterostructure from Arsenene and Antimonene

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

Strong interlayer coupling and long-lived interlayer excitons in two-dimensional perovskite derivatives and transition metal dichalcogenides van der Waals heterostructures

Multiorbital Model Reveals a Second-Order Topological Insulator in 1H Transition Metal Dichalcogenides

One-dimensional transition metal dichalcogenide lateral heterostructures