Abstract:III–V semiconductors such as GaAs are widely studied as promising candidates for high-speed integrated circuit. Despite these applications for conventional bulk structures, their fundamental physical properties in the nanoscale limit are still in scarcity, which is of great importance for the development of nanoelectronics. In this work, we demonstrate that the III–V semiconductor MX (M = Al, Ga, In; X = P, As, Sb) in its two-dimensional (2D) limit could exhibit double layer honeycomb (DLHC) configuration and distorted tetrahedral coordination, according to our first-principles calculations with HSE06 hybrid functional. It is found that surface reconstruction endows 2D III–V DLHCs with pronouncedly different electronic and magnetic properties from their bulk counterparts due to strong interlayer coupling. Mexican-hat-shape bands emerge at the top valence bands of pristine AlP, GaP, InP, AlAs, and InAs DLHCs, inducing the density of states showing a sharp van Hove singularity near the Fermi level. As a result, these DLHCs exhibit itinerant magnetism upon moderate hole doping, while the rest GaAs, AlSb, GaSb, and InSb DLHCs become magnetic under tensile strain with hole doping. With an exchange splitting of the localized pz states at the top valence bands, the hole-doped III–V DLHCs become half-metals with 100% spin-polarization. Remarkably, the InSb DLHC shows inverted band structure near the Fermi level, bringing about nontrivial topological band structures in stacked InSb DLHC due to the strong spin-orbital coupling. These III–V DLHCs expand the members of 2D material family and their exotic magnetic and topological properties may offer great potential for applications in the novel electronic and spintronic devices.

Electric‐Field‐Modulated Topological Phase Transition in AlSb/InSe Heterobilayers

Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films

van der Waals heterostructures of AlAs and InSe: Stacking-dependent Raman spectra and electric field dependence of electronic properties

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Exotic Topological Insulator States and Topological Phase Transitions in Sb2se3-Bi2se3 Heterostructures

Lateral Topological Crystalline Insulator Heterostructure

Electrically Tunable Topological Phase Transition in van der Waals Heterostructures

Carrier-driven magnetic and topological phase transitions in two-dimensional III–V semiconductors

Tunable topological electronic structures in Sb(111) bilayers: A first-principles study

Effect of external electric field on the electronic properties of AlAs/SiC van der Waals heterostructure

Two-Dimensional Topological Insulator Al 2 SbBi with a Double-Layer Honeycomb Structure with Large Spin Splitting and Piezoelectricity for Spintronic Devices

Electric field-modulated data storage in bilayer InSe

Nonvolatile ferroelectric control of topological states in 2D heterostructures

Lateral and Vertical Two-Dimensional Layered Topological Insulator Heterostructures

Nonvolatile ferroelectric control of topological states in two-dimensional heterostructures

Electronic and Transport Properties of InSe/PtTe2 van der Waals Heterostructure

Type-II band alignment AlN/InSe van der Waals heterostructure: Vertical strain and external electric field

Tuning the band gap and topological phase transition in bilayer van der Waals stanane by electric field

Electronic characteristics of the two-dimensional van der Waals ferroelectric α-In2Se3/Cs3Bi2I9 heterostructures