Effect of external electric field on the electronic properties of AlAs/SiC van der Waals heterostructure

Zicheng Zhang,Changxin Wan,Heng Li,Chun-sheng Liu,Meng Lan,Xiaohong Yan
DOI: https://doi.org/10.1039/d3cp03031h
IF: 3.3
2023-09-27
Physical Chemistry Chemical Physics
Abstract:Type-II van der Waals (vdW) heterostructures are regarded as the optimum candidates for unipolar electronic device applications, since their spontaneous electron-hole separation. Here, we studied the electronic properties of AlAs/SiC vdW heterostructure via density functional theory calculations. It shows that the conduction band minimum (CBM) and valence band maximum (VBM) of this heterostructure are mainly contributed by different materials, illustrating that AlAs/SiC heterostructure has a type-II band alignment. Interestingly, this heterostructure possesses flat valence bands near the Fermi level. In addition, under the modulation of external electric field ranges between -1 V/A ~ 0.8V/Å, the band gap of the heterostructure can be tuned continuously, but the band structure still maintains a stable type-II band alignment with flat top valence bands. When the electric field exceeds -1 V/Å or 0.8 V/Å, the heterostructure transitions from semiconductor to metal, indicating the tunability of electronic properties under external fields. These results indicate that AlAs/SiC heterostructure shows great potential application in high-performance optoelectronic devices and strong correlation effect may exist in this system.
chemistry, physical,physics, atomic, molecular & chemical
What problem does this paper attempt to address?