Abstract:Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

Recent Advances in 2D Lateral Heterostructures

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

A van der Waals pn heterojunction with organic/inorganic semiconductors

The More, the Better–Recent Advances in Construction of 2D Multi‐Heterostructures

Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications

Band alignment of two-dimensional lateral heterostructures

Recent Progress of Heterostructures Based on Two Dimensional Materials and Wide Bandgap Semiconductors

Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures

Design of Lateral Heterostructure from Arsenene and Antimonene

Editorial for two-dimensional materials-based heterostructures for next-generation nanodevices

Lateral Heterostructures: 1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis (Adv. Funct. Mater. 27/2021)

Fundamentals of lateral and vertical heterojunctions of atomically thin materials

Two-dimensional Heterostructures: Fabrication, Characterization, and Application

Recent advances in two-dimensional layered and non-layered materials hybrid heterostructures

Synthesis of lateral heterostructure of 2D materials for optoelectronic devices: challenges and opportunities

Recent progress in 2D van der Waals heterostructures: fabrication, properties, and applications

Two‐dimensional Lateral Heterojunction Arrays with Tailored Interface Band Bending

Two-dimensional Square Transition Metal Dichalcogenides with Lateral Heterostructures

Tuning electronic properties in the C3N/C3B lateral heterostructures

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Two-Dimensional Semiconductor Heterojunctions for Optoelectronics and Electronics