Abstract:Van der Waals (vdWs) heterostructures based on 2D metals and semiconductors have attracted considerable attention due to their excellent properties and great application potential in next‐generation electronic and optoelectronic devices. To obtain such vdWs heterostructures, the conventional approach with artificial exfoliation and stacking of 2D metals onto 2D semiconductors in the vertical direction is still far from satisfactory, because of the low yield and impurity‐involved transfer process. Here, two‐step vapor deposition growth of 2D TaSe2‐MoSe2 metal–semiconductor heterostructures is reported. Raman maps confirm the precise spatial modulation of the as‐grown 2D TaSe2‐MoSe2 heterostructures. Structural analysis reveals that the upper 1T‐TaSe2 is formed heteroepitaxially on/around the presynthesized 2H‐MoSe2 monolayers with an epitaxial relationship of (10‐10)TaSe2//(10‐10)MoSe2 and [0001]TaSe2//[0001]MoSe2. Based on the detailed characterizations of morphology, structure, and composition, an edge‐induced growth mechanism is proposed to illustrate the formation process of the 2D heterostructures, confirmed by first‐principle calculations. In addition, Kelvin probe force microscope characterizations and electrical transport measurements confirm that the 2D metal–semiconductor heterostructures exhibit typical rectification characteristics with a contact potential height of ≈431 mV. The direct growth of high‐quality 2D metal–semiconductor heterostructures marks an important step toward high‐performance integrated optoelectronic devices. 2D TaSe2‐MoSe2 metal–semiconductor heterostructures are successfully achieved usin an edge‐induced epitaxial growth mode. The unique contact potential and strong current rectification behavior will facilitate the development high‐performance transition metal dichalcogenide‐based electronic devices.

Controllable electronic properties, contact barriers and contact types in a TaSe 2 /WSe 2 metal–semiconductor heterostructure

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Achieving ultra-low contact barriers in MX2/SiH (M = Nb, Ta; X = S, Se) metal-semiconductor heterostructures: first-principles prediction

Two-dimensional MoS2/Ti2CX2 (X = S, Se, Te) heterostructures with tunable electrical contact type

Electrical contact property and control effects for stable T(H)-TaS2/C3B metal-semiconductor heterojunctions

Enhancing the Electronic and Optical Properties of Metal/Semiconductor NbS /BSe nanoheterostructure towards Advanced Electronics

Exploring the versatility in the MoSe2/WS2 heterostructures

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

Two-dimensional Metallic Alloy Contacts with Composition-Tunable Work Functions

First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

First-principles investigations of metal-semiconductor MoSH@MoS2 van der Waals heterostructures

Strain-engineered Robust and Schottky-barrier-free Contact in 2D Metal–semiconductor Heterostructure

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts

Tunable Electronic Properties and Contact Performance of Type‐II HfS2 /MoS2 Van der Waals Heterostructure

Controlling phase transition in WSe2 towards ideal n-type transistor

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Edge‐Assisted Epitaxy of 2D TaSe 2 ‐MoSe 2 Metal‐Semiconductor Heterostructures and Application to Schottky Diodes

Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering