Abstract:One-dimensional (1D) van der Waals (vdW) heterostructures, formed between coaxial nanotubes of transition metal dichalcogenides (TMDCs), have emerged as a new area of endeavor in nanoscience. A key to designing and engineering the properties of such 1D vdW heterostructures lies on understanding the band alignment of coaxial nanotubes in the heterostructures. However, how curvature, tube diameters, and intertube coupling affect the band-edge levels and band alignment of TMDC nanotubes in 1D vdW heterostructures remains unknown. Here, through comprehensive first-principles calculations and analyses, we establish a complete framework of band alignment in 1D vdW heterostructures of TMDC nanotubes. We reveal that, as the diameter of a TMDC nanotube decreases, the combined effects of curvature-induced flexoelectricity and intrinsic circumferential tensile strain cause a rapid and continuous lowering of the conduction band minimum (CBM), whereas the valence band maximum (VBM) exhibits an initial lowering before rising, which originates from a change in the orbital character of the VBM. The transition in the orbital character of VBM also leads to direct-to-indirect bandgap transition in small-diameter armchair and chiral nanotubes, as well as photoluminescence quenching in zigzag nanotubes. As individual TMDC nanotubes form coaxial 1D vdW heterostructures, the effect of intertube coupling via flexovoltage effect can result in a transition of intertube band alignment from Type II to Type I in multiple heterostructural systems, including large-diameter MoSe$_2$@WS$_2$, MoTe$_2$@MoSe$_2$, and MoTe$_2$@WS$_2$ heterostructures. These results lay down a foundation for the rational design of 1D vdW heterostructures.

Electronic Structures and Band Alignment Transition in Double-Wall MoS2/WS2 Nanotubes for Optoelectronic Applications

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

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Interlayer Couplings, Moiré Patterns, and 2D Electronic Superlattices in MoS 2 /wse 2 Hetero-Bilayers

Curvature-Controlled Band Alignment Transitions in 1D van der Waals Heterostructures

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Curvature-controlled band alignment transition in 1D van der Waals heterostructures

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Electric Field Modulation of the Band Structure in MoS2/WS2 Van Der Waals Heterostructure

Band engineering of double-wall Mo-based hybrid nanotubes

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers

Band alignment of one-dimensional transition-metal dichalcogenide heterotubes

Tunable electronic properties and band alignments of MoSi$_2$N$_4$/GaN and MoSi$_2$N$_4$/ZnO van der Waals heterostructures

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

Electric Field Effects on the Electronic Structures of MoS2/antimonene Van Der Waals Heterostructure

Exploring the versatility in the MoSe2/WS2 heterostructures

Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures

Effect of Doping and Defects on the Electronic Properties of MoS 2 /WSe 2 Bilayer Heterostructure: A First-principles Study

Indirect-to-direct band gap crossover of single walled MoS$_2$ nanotubes

Band alignment of monolayer MoS2/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy