Abstract:In this paper, the structural stability, electronic structure, and optical properties of monolayer MoSe 2 doped with C, O, Si, S, and Te atoms, respectively, under defective conditions are investigated based on first principles. It is found that the system is more structurally stable when defecting a single Se atom as compared to defecting a single Mo or two Se atoms. The electronic structure analysis of the system reveals that intrinsic MoSe 2 is a direct bandgap semiconductor. The bandgap value of the system decreases with a single Se atom defect and introduces two new impurity energy levels in the conduction band. The defective systems doped with C and Si atoms all exhibit P-type doping. The total density of states of intrinsic MoSe 2 is mainly contributed by the Mo-d and Se-p orbitals, and new density of state peaks appears near the conduction band after the defects of Se atoms. The total density of states of the defective system doped by each atom is mainly contributed by Mo-d, Se-p, and the result of the p orbital contribution of each dopant atom. By analyzing the dielectric function of each system, it is found that the intrinsic MoSe 2 has the lowest static permittivity and the C-doped defect system has the highest static permittivity, which reaches 21.42. The C- and Si-doped defect systems are the first to start absorbing the light, and the intrinsic MoSe 2 absorbs the light later, with its absorption edge starting at 1.25 eV. In the visible range, the reflection peaks of the systems move toward the high-energy region and the blue-shift phenomenon occurs. It is hoped that applying modification means to modulate the physical properties of the two-dimensional materials will provide some theoretical basis for broadening the application of monolayer MoSe 2 in the field of optoelectronic devices.

Effect of Doping and Defects on the Electronic Properties of MoS 2 /WSe 2 Bilayer Heterostructure: A First-principles Study

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers

The Effects of Nonmetal Dopants on the Electronic, Optical, and Catalytic Performances of Monolayer WSe2 by a First-Principles Study

First-principles study of the effect of doping on the optoelectronic properties of defective monolayers of MoSe2

Geometric, electronic, and optical properties of MoS 2 /WSSe van der Waals heterojunctions: a first-principles study

A First-Principles Study of Impurity Effects on Monolayer MoS2: Bandgap Dominated by Donor Impurities

Tunable Band-Structures of MSe2/C3N (M = Mo and W) Van Der Waals Heterojunctions

Exploring the versatility in the MoSe2/WS2 heterostructures

Layer-Dependent Electron Transfer and Recombination Processes in MoS2/WSe2 Multilayer Heterostructures.

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: A firstprinciples perspective

Simulation of electrical rectification effect in two-dimensional MoSe2/WSe2 lateral heterostructures

Bandgap Engineering and Tuning of Optoelectronic Properties of 2D NbSe2/MoS2 Heterostructure Using First Principle Computations

Interlayer excitons and Band Alignment in MoS$_2$/hBN/WSe$_2$ van der Waals Heterostructures

Interlayer Excitons and Band Alignment in MoS2/hBN/WSe2 van der Waals Heterostructures

Simulation of electrical rectification effect in two-dimensional MoSe2/WSe2lateral heterostructures

Understanding the Effects of Dielectric Property, Separation Distance, and Band Alignment on Interlayer Excitons in 2D Hybrid MoS2/WSe2 Heterostructures

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

Manipulation of Band Alignment in Two-Dimensional Vertical WSe2/BA2PbI4 Ruddlesden-Popper Perovskite Heterojunctions Via Defect Engineering.