Abstract:One of the most appealing aspects of the two-dimensional transition-metal dichalcogenides (2D-TMDs) is that they have a variety of crystal types, which can exist in three different atomic lattices, 2H, 1 T and 1 T', and can therefore exhibit diverse electronic properties. In addition, 2D-TMD heterostructures with distinctive features can be generated by combining two monolayers either vertically or laterally (in-plane). In this work, we used first-principles calculations to explore the structural and electronic properties of the H-phase MoTe2 monolayer, the T'-phase WTe2 monolayer, and their in-plane heterostructures (H-MoTe2/T'-WTe2). The H-phase MoTe2 monolayer has a band structure with a direct band gap, whereas the 1 T'-WTe2 monolayer is projected to be a Weyl semimetal based on our findings. We constructed a series of five relatively stable in-plane H-MoTe2/T'-WTe2 heterostructures with metal–semiconductor and studied their electronic properties. The band structures of these in-plane heterostructures were shown to be strongly related to the relative orientations of the monolayers at the interface. In particular, the band gaps of the heterostructures joined along the armchair direction were found to be smaller than 0.1 eV. By sewing the MoTe2 and WTe2 monolayers along the zigzag direction, two relatively stable structures were created, with according to the band structure analysis, exhibited metallic characteristics. Surprisingly, band inversion appeared near the Fermi level due to boundary effects. Therefore, topological properties may be present in such in-plane heterostructures. Moreover, some of these in-plane H-MoTe2/T'-WTe2 heterostructures have effective Schottky barrier heights smaller than 0.25 eV for holes, and could thus be used to construct field effect transistors (FETs). We also found that the effective Schottky barrier height was largely determined by the interfacial bonding environment, the external electric field, and uniaxial strains. Our findings enrich the diversity of the 2D-TMDs heterostructures and point to a viable approach for the design of high-performance electronic and optoelectronic devices.

Curvature-controlled band alignment transition in 1D van der Waals heterostructures

Curvature-Controlled Band Alignment Transitions in 1D van der Waals Heterostructures

Band alignment of one-dimensional transition-metal dichalcogenide heterotubes

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Tuning Band Gaps in Twisted Bilayer MoS_2

Tunability of Multiple Ultraflat Bands and Effect of Spin-Orbit Coupling in Twisted Bilayer Transition Metal Dichalcogenides

Electronic Structures and Band Alignment Transition in Double-Wall MoS2/WS2 Nanotubes for Optoelectronic Applications

Effect of vertical strain and in-plane biaxial strain on type-II MoSi<sub>2</sub>N<sub>4</sub>/Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> van der Waals heterostructure

Strain‐Engineered Level Alignment in the MoTe2/WSe2 Heterobilayer

Engineering the band structure of type-II MoSe2/WSe2 van der Waals heterostructure by electric field and twist angle: A firstprinciples perspective

Geometric band properties in strained monolayer transition metal dichalcogenides using simple band structures

One-dimensional transition metal dichalcogenide lateral heterostructures

Effects of structural distortions on the electronic structure of T -type transition metal dichalcogenides

Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study

Systematic Study of Electronic Structure and Band Alignment of Monolayer Transition Metal Dichalcogenides in Van Der Waals Heterostructures

Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures

Torsional strain engineering of transition metal dichalcogenide nanotubes: An ab initio study

Relaxation effects in transition metal dichalcogenide bilayer heterostructures

Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction

Interfacial properties of In-plane monolayer 2H-MoTe2/1T'-WTe2 heterostructures