Twisted angle modulated structural property, electronic structure and carrier transport of MoS2/AlN(0001) mixed-dimensional van der Waals heterostructure

Jiaduo Zhu,Wei Shang,Jing Ning,Dong Wang,Jincheng Zhang,Yue Hao
DOI: https://doi.org/10.1016/j.apsusc.2021.150330
IF: 6.7
2021-10-01
Applied Surface Science
Abstract:<p>The emerging mixed-dimensional heterostructures of transition metal dichalcogenides with wide bandgap semiconductors of piezoelectric characteristics have shown excellent performance with novel pressure-modulation in flexible devices. Meanwhile, the recent introduction of "twist" at the interface of van der Waals (vdW) systems brought much flexibility in the manipulation of electrical and optical properties, giving rise to new physics. In this work, twisted angles ranging from 0° to 150° were introduced to the interface of the newly MoS<sub>2</sub>/AlN(0001) vdW mixed-dimensional heterostructures. Although all systems form type-I band alignment, the interfacial coupling can be evidently modulated by the twisted angles, leading to twisted angle-dependent structural characteristics, electronic structure, and carrier transport with a period of 60°. The most intriguing is that a large manipulating scale of band offset and carrier transmission window (intensity) can be achieved by specifying the rotation, suggesting an effective route to design the electronic structure. It was further revealed that twisted angle modulated interfacial coupling gives rise to a diversity of resonant states' distribution in the momentum space. Our study not only systemically investigated the newly MoS<sub>2</sub>/AlN(0001) vdW mixed-dimensional heterostructure, but also proposed a novel route to effectively manipulate the properties of mixed-dimensional heterostructure layer by layer.</p>
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to regulate the structural characteristics, electronic structure and carrier transport of the mixed - dimensional van der Waals heterostructure composed of molybdenum disulfide (MoS₂) and aluminum nitride (AlN) by introducing the twist angle. Specifically, the researchers explored the influence of the twist angle in the range of 0° to 150° on the MoS₂/AlN(0001) heterostructure, aiming to find an effective way to design and adjust the properties of these heterostructures, especially their band offsets and carrier transport windows (intensity), which provides new ideas for designing electronic devices with specific functions. The paper mentions that by rotating the interface, the van der Waals coupling can be effectively adjusted without changing the properties of the materials themselves, thus affecting the electronic structure and carrier transport characteristics of the heterostructure, which is of great significance for the development of high - performance optoelectronic devices and flexible electronic devices.