Precise control of the interlayer twist angle in large scale MoS 2 homostructures.

Mengzhou Liao,Zheng Wei,Luojun Du,Qinqin Wang,Jian Tang,Hua Yu,Fanfan Wu,Jiaojiao Zhao,Xiaozhi Xu,Bo Han,Kaihui Liu,Peng Gao,Tomas Polcar,Zhipei Sun,Dongxia Shi,Rong Yang,Guangyu Zhang
DOI: https://doi.org/10.1038/s41467-020-16056-4
IF: 16.6
2020-01-01
Nature Communications
Abstract:Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction-twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS homostructures via the combination of wafer-scale highly-oriented monolayer MoS growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.
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