Large Twist Angle dependent Ultrafast Transient Dynamics and Raman studies on MoSe2/WSe2 van der Waals Heterostructures

Vikas Arora,Pramoda K Nayak,Victor S Muthu,A K Sood

2024-11-26

Abstract:Two-dimensional van der Waals heterostructures (HS) exhibit twist-angle ({\theta}) dependent interlayer charge transfer, driven by moiré potential that tunes the electronic band structure with varying {\theta}. Apart from the magic angles of {$\sim$}3$^{\circ}$ and {$\sim$}57.5$^{\circ}$ that show flat valence bands (twisted WSe2 bilayer), the commensurate angles of 21.8$^{\circ}$ and 38.2$^{\circ}$ reveal the Umklapp light coupling of interlayer excitons (twisted MoSe2 /WSe2 HS). We report a non-degenerate optical pump-optical probe spectroscopy and Raman spectroscopy of MoSe2/WSe2 HS at large twist angles. The recombination time of interlayer excitons reaches a minima near commensurate angles. Raman spectroscopy reveals an opposite shift in the A1g modes of MoSe2 and WSe2, with the maximum shift occurring in the vicinity of twist angles of 21.8$^{\circ}$ and 38.2$^{\circ}$. At these commensurate angles, maximum charge transfer increases Coulomb screening, reducing the interlayer exciton lifetime. This study emphasizes the significance of the large twist angle of HS in developing transition metal dichalcogenides-based optoelectronic devices.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the influence of large twist angles on the ultrafast transient dynamics and Raman spectra in molybdenum disulfide/tungsten diselenide (MoSe₂/WSe₂) van der Waals heterostructures (HS). Specifically, the research focuses on:

1. **The influence of the twist angle on the interlayer exciton lifetime**: The paper studied the recombination time of interlayer excitons in MoSe₂/WSe₂ heterostructures at different twist angles through non - degenerate optical pump - optical probe spectroscopy. The research shows that near the specific commensurate angles of 21.8° and 38.2°, the recombination time of interlayer excitons is significantly shortened, which is attributed to the additional recombination channels provided by the Umklapp scattering process.

2. **Changes in Raman spectra**: The changes in the A₁g mode of MoSe₂ and WSe₂ at different twist angles were studied by Raman spectroscopy. The results show that as the twist angle changes, the A₁g modes of these two materials show opposite displacement trends, and the displacement is the largest when approaching the commensurate angles. These changes are closely related to the interlayer charge transfer and Coulomb screening effect.

### Key findings
- **Interlayer exciton recombination time**: Near 21.8° and 38.2°, the recombination time of interlayer excitons reaches a minimum value, which is due to the additional recombination channels caused by the Umklapp scattering process.
- **Raman spectral changes**: The A₁g modes of MoSe₂ and WSe₂ show opposite trends with the change of the twist angle, and the displacement is the largest when approaching the commensurate angles.
- **Charge transfer and Coulomb shielding**: Near these specific angles, the maximum charge transfer increases the Coulomb shielding effect, thereby shortening the lifetime of interlayer excitons.

### Research significance
This research emphasizes the importance of large twist angles in the development of optoelectronic devices based on transition metal dichalcogenides (TMDs), especially when designing photovoltaic, photodetector and light - emitting devices, where charge transfer and recombination time are key parameters.

### Formula explanation
The formulas involved in the paper are as follows:
\[
\frac{\Delta R}{R(t)}=\frac{1}{2}\left(1 + \operatorname{erf}\left(\frac{t - t_0}{\tau_r}\right)\right)\left(A_1 e^{-t/\tau_1}+(1 - A_1) e^{-t/\tau_2}\right)
\]
where:
- \(A_1\) and \(1 - A_1\) respectively represent the proportions of photo - excited carriers that form inner - layer excitons and interlayer excitons.
- \(\tau_1\approx8 \, \text{ps}\) is the recombination time of inner - layer excitons.
- \(\tau_2\approx45 \, \text{ps}\) is the recombination time of interlayer excitons.

These research results provide important experimental basis for understanding the ultrafast dynamics in two - dimensional material heterostructures and theoretical support for future optoelectronic applications.