Abstract:Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moire superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at similar to 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Gamma-K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures. The twist-angle-modulated excitons in vertically stacked WS2/WSe2 heterobilayers are proven to be an indirect G-K intralayer transition, with a nearly in-plane transition dipole moment.

Anomalous redshift in interlayer exciton emission with increasing twist angle in WSe 2 /MoSe 2 heterostructures

Twist Angle Dependence of Exciton Resonances in WSe$_2$/MoSe$_2$ Moiré Heterostructures

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Amplification of interlayer exciton emission in twisted WSe$_2$/WSe$_2$/MoSe$_2$ heterotrilayers

Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe2/WSe2 van der Waals Heterostructures

Identification of twist-angle-dependent excitons in WS2/WSe2 heterobilayers

Polaron-induced changes in moiré exciton propagation in twisted van der Waals heterostructures

Twist-angle-dependent Momentum-Space Direct and Indirect Interlayer Excitons in WSe2/WS2 Heterostructure.

Excitonic response in TMD heterostructures from first-principles: impact of stacking, twisting, and interlayer distance

Hybridized intervalley moiré excitons and flat bands in twisted WSe$_2$ bilayers

Polarization and charge-separation of moiré excitons in van der Waals heterostructures

Large Twist Angle dependent Ultrafast Transient Dynamics and Raman studies on MoSe2/WSe2 van der Waals Heterostructures

Twist-angle-dependent interlayer exciton diffusion in WS2–WSe2 heterobilayers

Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors

Twist-Angle-Dependent Optoelectronics in a Few-Layer Transition-Metal Dichalcogenide Heterostructure

Tunable Phases of Moiré Excitons in van der Waals Heterostructures

Exciton fine structure in twisted transition metal dichalcogenide heterostructures

Twist angle-dependent interlayer hybridized exciton lifetimes in van der Waals heterostructures

Moiré Enhanced Potentials in Twisted Transition Metal Dichalcogenide Trilayers Homostructures