Band structure engineering of van der Waals heterostructures using ferroelectric clamped sandwich structures

Hao Tian,Changsong Xu,Xu Li,Yurong Yang,L. Bellaiche,Di Wu
DOI: https://doi.org/10.1103/physrevb.103.125426
IF: 3.7
2021-03-25
Physical Review B
Abstract:A novel strategy of band structure engineering of van der Waals heterostructure is proposed using a ferroelectric (FE) clamped sandwich structure from first principles. The validity of the strategy is demonstrated in the sandwich structure of In2Se3/bilayer-CrI3/In2Se3 (In2Se3/bi-CrI3/In2Se3) made by ferroelectric In2Se3 layers and semiconducting bilayer (SB) CrI3. Four states with different band structures in the FE/SB/FE sandwich structure are obtained by switching the FE polarization in the top and bottom In2Se3 layers. Two of the states possess spin-splitting semiconducting band structures with opposite spin channel in conduction bands which are generated from a spin-degenerated band structure of the CrI3 bilayer, resulting in an electric field controllable and nonvolatile four states spin-field effect transistor. The strategy of using FE layers to engineer band structures and generate spin-splitting semiconducting band structure in van der Waals heterostructure opens a new route in two-dimensional electronics and spintronics.
physics, condensed matter, applied,materials science, multidisciplinary
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