Abstract:Magneto-ionics, by which the magnetic properties of a thin layer can be modified through the migration of ions within a liquid or solid electrolyte, is a fast developing research field. This is mainly due to the perspective of energy efficient magnetic devices, in which the magnetization direction is controlled not by a magnetic field or an electrical current, as done in traditional devices, but by an electric field, leading to a considerable reduction of energy consumption. In this work, the interfacial perpendicular magnetic anisotropy (PMA) of a series of Pt/Co/oxide trilayers covered by a ZrO$_2$ layer, acting as a ionic conductor, was finely tuned by a gate voltage at room temperature. The non-volatility and the time evolution of the effect point at oxygen ion migration across the ZrO$_2$ layer as the driving mechanism. A large variation of the PMA is obtained by modifying the degree of oxidation of the cobalt layer with the flux of oxygen ions: the easy magnetization axis can be switched reversibly from in-plane, with an under-oxidized Co, to in-plane, with an over-oxidized Co, passing through an out-of-plane magnetization with maximum PMA. The switching time between the different magnetic states is limited by the oxygen ion drift velocity through the multilayer structure. This was shown to depend exponentially on the applied bias voltage, and could be varied by over 5 orders of magnitude, from several minutes to a few ms. On the other hand, for a fixed gate-voltage, the oxidation of the cobalt layer decreases exponentially as a function of time. This behavior is in agreement with the theoretical model developed by Cabrera and Mott (1949) to explain the growth of very thin oxides at low temperatures. The possibility to explain the observed effect with a relatively simple theoretical model opens the possibility to engineers materials with optimized properties.

Role of Oxygen Ion Migration in the Electrical Control of Magnetism in Pt/Co/Ni/HfO2 Films

Electrical Control of Co/Ni Magnetism Adjacent to Gate Oxides with Low Oxygen Ion Mobility

Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics

Electrical control of ON–OFF magnetism and exchange bias via reversible ionic motion

Oxygen-Valve Formed in Cobaltite-Based Heterostructures by Ionic Liquid and Ferroelectric Dual-Gating.

Beyond the Interface Limit: Structural and Magnetic Depth Profiles of Voltage-Controlled Magneto-Ionic Heterostructures

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces.

Ionic control of magnetism in all-solid-state CoO x /yttria-stabilized zirconia heterostructures

Kinetics of ion migration in the electric field-driven manipulation of magnetic anisotropy of Pt/Co/oxide multilayers

Continuous and Fast Magneto-Ionic Control of Magnetism in Ta/Co/BiFeO3/SrRuO3 Multiferroic Heterostructure

Control of Compensation Temperature in CoGd Films through Hydrogen and Oxygen Migration under Gate Voltage

Electric-Field Control of Oxygen Vacancies and Magnetic Phase Transition in a Cobaltite/Manganite Bilayer

Electric-field control of the perpendicular magnetization switching in ferroelectric/ferrimagnet heterostructures

Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni81fe19/Cuox/Tan Heterostructure

Effects of mobile oxygen ions in top-gated synthetic antiferromagnet structure

Voltage control of magnetic properties in GdxFe100-x films by hydrogen migration

Strong Electrical Manipulation of Spin–Orbit Torque in Ferromagnetic Heterostructures

Magneto-ionic Control of Ferrimagnetic Order by Oxygen Gating

Nitrogen-Based Magneto-Ionic Manipulation of Exchange Bias in CoFe/MnN Heterostructures