Abstract:Voltage control of magnetic order is desirable for spintronic device applications, but 180° magnetization switching is not straightforward because electric fields do not break time-reversal symmetry. Ferrimagnets are promising candidates for 180° switching owing to a multi-sublattice configuration with opposing magnetic moments of different magnitudes. In this study we used solid-state hydrogen gating to control the ferrimagnetic order in rare earth–transition metal thin films dynamically. Electric field-induced hydrogen loading/unloading in GdCo can shift the magnetic compensation temperature by more than 100 K, which enables control of the dominant magnetic sublattice. X-ray magnetic circular dichroism measurements and ab initio calculations indicate that the magnetization control originates from the weakening of antiferromagnetic exchange coupling that reduces the magnetization of Gd more than that of Co upon hydrogenation. We observed reversible, gate voltage-induced net magnetization switching and full 180° Néel vector reversal in the absence of external magnetic fields. Furthermore, we generated ferrimagnetic spin textures, such as chiral domain walls and skyrmions, in racetrack devices through hydrogen gating. With gating times as short as 50 μs and endurance of more than 10,000 cycles, our method provides a powerful means to tune ferrimagnetic spin textures and dynamics, with broad applicability in the rapidly emerging field of ferrimagnetic spintronics. Voltage control of magnetic order is one of the keys to energy-efficient spintronic applications. Voltage gating using a solid-state hydrogen pump now allows for reversible control of ferrimagnetic order, external-field-free 180° magnetic switching and ferrimagnetic spin texture writing.

Voltage control of magnetic properties in GdxFe100-x films by hydrogen migration

Voltage control of ferrimagnetic order and voltage-assisted writing of ferrimagnetic spin textures

Control of Compensation Temperature in CoGd Films through Hydrogen and Oxygen Migration under Gate Voltage

Modulating the Verwey Transition of Epitaxial Magnetite Thin Films by Ionic Gating

Role of Oxygen Ion Migration in the Electrical Control of Magnetism in Pt/Co/Ni/HfO2 Films

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

All-solid integratable device of electric field control of magnetism based on hydrogen ion migration in La1−xSrxMnO3

Using Dipole Interaction to Achieve Nonvolatile Voltage Control of Magnetism in Multiferroic Heterostructures

Beyond the Interface Limit: Structural and Magnetic Depth Profiles of Voltage-Controlled Magneto-Ionic Heterostructures

Electrical Manipulation of Oxygen Ion Migrations for the Voltage‐Controlled Adjustment of Magnetic Anisotropy and Optimized Skyrmion Generations

Field-free control and switching of perpendicular magnetization by voltage induced manipulation of RKKY interaction

Voltage-driven 90 switching of bulk perpendicular magnetic anisotropy in ferrimagnets

Electric-field control of the perpendicular magnetization switching in ferroelectric/ferrimagnet heterostructures

Space‐charge Control of Magnetism in Ferromagnetic Metals: Coupling Giant Magnitude and Robust Endurance

All-voltage control of Giant Magnetoresistance

Strong Non-Volatile Voltage Control Of Magnetism In Magnetic/Antiferroelectric Magnetoelectric Heterostructures

Geometric and Anisotropy Effects on Voltage Driven Magnetic Switching Behaviors in Nanoscale Multiferroic Heterostructure

Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Space‐Charge Control of Magnetism in Ferromagnetic Metals: Coupling Giant Magnitude and Robust Endurance (adv. Mater. 8/2023)

Continuous and Fast Magneto-Ionic Control of Magnetism in Ta/Co/BiFeO3/SrRuO3 Multiferroic Heterostructure