Abstract:Inducing magnetism onto a topological crystalline insulator (TCI) has been predicted to result in several novel quantum electromagnetic effects. This is a consequence of the highly strain-sensitive band topology of such symmetry-protected systems. We thus show that placing the TCI surface of SnTe in proximity to EuS, a ferromagnetic insulator, induces magnetism at the interface between SnTe and EuS and thus breaks time-reversal-symmetry in the TCI. Magnetotransport experiments on SnTe-EuS-SnTe trilayer devices reveal a hysteretic lowering of the resistance at the TCI surface that coincides with an increase in the density of magnetic domain walls. This additional conduction could be a signature of topologically-protected surface states within domain walls. Additionally, a hysteretic anomalous Hall effect reveals that the usual in-plane magnetic moment of the EuS layer is canted towards a perpendicular direction at the interface. These results are evidence of induced magnetism at the SnTe-EuS interfaces resulting in broken time-reversal symmetry in the TCI.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to induce magnetism on the surface of topological crystalline insulators (TCI) and study the influence of this magnetism on the quantum electromagnetic effect. Specifically, the author explores the possibility of inducing magnetism at the interface by combining SnTe (a TCI material) with EuS (a ferromagnetic insulator), thereby breaking time - reversal symmetry and observing the resulting physical phenomena. ### Specific background and objectives of the problem: 1. **Theoretical prediction**: - Introducing magnetism on the surface of topological crystalline insulators (TCI) can lead to some novel quantum electromagnetic effects. This is because such systems have a highly strain - sensitive band - topology structure. - The introduction of magnetism may break time - reversal symmetry (TRS) and may lead to phenomena such as the quantum anomalous Hall effect (QAHE). 2. **Experimental method**: - The author realizes the introduction of magnetism by placing a layer of EuS on the SnTe surface. EuS is a ferromagnetic insulator, and its magnetic moment can affect the electronic state of SnTe at the interface. - The magnetic transport characteristics in the SnTe - EuS - SnTe three - layer structure were studied, including the negative magnetoresistance effect and the anomalous Hall effect (AHE). 3. **Key findings**: - The experimental results show that when approaching the coercive field of EuS, the resistance on the SnTe surface decreases significantly, indicating that there may be one - dimensional conductive channels in the magnetic domain wall. - The observation of the anomalous Hall effect further confirms that the magnetic moment is canted at the interface, that is, part of the magnetic moment points in the vertical direction, which is a necessary condition for breaking time - reversal symmetry. 4. **Scientific significance**: - This research provides important experimental evidence for future exploration of strange quantum phenomena in the surface states of topological crystalline insulators caused by adjacent magnetization. - By introducing magnetism in this way without relying on doping, the problem of reducing carrier mobility can be avoided, thereby achieving a high - mobility quantum anomalous Hall effect. ### Summary: The main objective of this paper is to experimentally verify the feasibility of introducing magnetism on the surface of topological crystalline insulators and study its influence on the quantum electromagnetic effect. By introducing an EuS layer on the SnTe surface, the author successfully induced magnetism at the interface and observed a series of conductive phenomena related to magnetic domain walls, which provide new ideas and directions for future quantum material research.

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