Abstract:Constructing heterostructures of a topological insulator (TI) with an undoped magnetic insulator (MI) is a clean and versatile approach to break the time-reversible symmetry in the TI surface states. Despite a lot of efforts, the strength of interfacial magnetic proximity effect (MPE) is still too weak to achieve the quantum anomalous Hall effect and many other topological quantum phenomena. Recently, a new approach based on intercalation of atomic layers of MI, referred to as magnetic extension, was proposed to realize strong MPE [2D Mater. 4, 025082(2017)]. Motivated by this proposal, here, we study a magnetic extension system prepared by molecular beam epitaxy growth of MnSe thin films on topological insulator (Bi,Sb)2Te3. Direct evidence is obtained for intercalation of MnSe atomic layer into a few quintuple layers of (Bi,Sb)2Te3, forming either a double magnetic septuple layer (SL) or an isolated single SL at the interface, where one SL denotes a van der Waals building block consisting of B-A-B-Mn-B-A-B (A=Bi1-xSbx, B= Te1-ySey). The two types of interfaces (namely TI/mono-SL and TI/bi-SL) have different MPE, which is manifested as distinctively different transport behaviors. Specifically, the mono-SL induces a spinflip transition with a sharp change at small magnetic field in the anomalous Hall effect of TI layers, while the bi-SL induces a spin-flop transition with a slow change at large field. Our work demonstrates a useful platform to realize the full potential of the magnetic extension approach for pursuing novel topological physics and related device applications.

Parallel Field Magnetoresistance in Topological Insulator Thin Films

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Proximity-induced anisotropic magnetoresistance in magnetized topological insulators

Superconducting-contact-induced resistance-anomalies in the 3D topological insulator Bi2Te3

Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-Xinx)2se3 Nanodevices

Experimental Realization of an Intrinsic Magnetic Topological Insulator

Proximity-Induced Magnetic Order in a Transferred Topological Insulator Thin Film on a Magnetic Insulator.

Anomalous anisotropic magnetoresistance in topological insulator films

Magneto-transport Effects in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

The anomalous Hall Effect in a Magnetically Extended Topological Insulator Heterostructure

Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in the Intrinsic Magnetic Topological Insulator MnBi4Te7

Indication of novel magnetoresistance mechanism in (Bi,Sb)$_2$(Te,Se)$_3$ 3D topological insulator thin films

Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films

Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface

Proximity induced high-temperature magnetic order in topological insulator--ferrimagnetic insulator heterostructure.

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

Disentangling the Magnetoelectric and Thermoelectric Transport in Topological Insulator Thin Films

Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

Magnetotransport Signatures of Superconducting Cooper Pairs Carried by Topological Surface States in Bismuth Selenide

In-plane Magnetic Field Induced Helicity Dependent Photogalvanic Effect on the Surface States of Topological Insulators (Bixsb1−x)2te3