Abstract:Specific features in magnetotransport properties due to gradual forming the topological insulator state in sample of single-crystalline n-type Bi2Te2.7Se0.3 during its cooling were analyzed. The electrical resistivity of sample, measured from 2 K to 240 K, corresponds to partially degenerate semiconductor and dominantly depends on T-effect on electron mobility. The moblity is governed by electron-phonon scattering above TC=50K, whereas below TC electron-electron scattering is dominant scattering mechanism. With increasing temperature, electron content linearly increases above TC, whereas below TC electron content is very weakly T-dependent. Transverse magnetoresistance of sample is positive and strongly T-dependent. Two features, which are characteristic for topological insulators, were found in the magnetoresistance. First feature is a crossover from quadratic to linear magnetoresistance, observed within TC < T <240 K range. Crossover field BC decreases with decreasing temperature. Linear magnetoresistace is quantum one that can be due to presence of Dirac fermions, which occupy the lowest Landau level under magnetic field. Second feature is another crossover from combined quadratic-linear to dip-shaped magnetoresistrance, observed at T ≤ TC . Dip-shaped magnetoresistrance is related to weak antilocalization (WAL) phenomenon. The WAL phenomenon and the electron-electron scattering process coexist at the same temperature range. Dip-shaped magnetoresistrance was analysed by in frames of the Hikami-Larkin-Nagaoka model, developed for systems with strong spin-orbit coupling. At cooling below ~ 30 K, the effective dephasing length rapidly increases that is dominantly related to the electron-electron scattering process, too. The parameter α, characterizing the number of conduction channels, contributing to electron transport, is close to 0.5. This value α corresponds to a single topologically non-trivial conduction channel.

Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films

Unusual non saturating Giant Magneto-resistance in single crystalline Bi2Te3 topological insulator

Magneto-transport Effects in Topological Insulator Bi$_2$Se$_3$ Nanoribbons

Gate-tunable magnetoresistance in six-septuple-layer MnBi<sub>2</sub>Te<sub>4</sub>

Electrodynamics of MnBi2Te4 Intrinsic Magnetic Topological Insulators

Electrically tuned magnetic order and magnetoresistance in a topological insulator

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator

From Negative to Positive Magnetoresistance in the Intrinsic Magnetic Topological Insulator MnBi2Te4

Zeeman Effect of the Topological Surface States Revealed by Quantum Oscillations Up to 91 Tesla

Magnetotransport Properties of Layered Topological Material ZrTe2 Thin Film

Temperature evolution of transverse magnetoresistance due to forming the topological insulator state in single-crystalline n-type Bi2Te2.7Se0.3

Parallel Field Magnetoresistance in Topological Insulator Thin Films

Fermi level dependence of magnetism and magnetotransport in the magnetic topological insulators Bi$_{2}$Te$_{3}$ and BiSbTe$_{3}$ containing self-organized MnBi$_{2}$Te$_{4}$ septuple layers

Magnetic topological insulator MnBi 6 Te 10 with a zero-field ferromagnetic state and gapped Dirac surface states

Disentangling the Magnetoelectric and Thermoelectric Transport in Topological Insulator Thin Films

Large Magnetoresistance in High Mobility Topological Insulator Bi2Se3

Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in the Intrinsic Magnetic Topological Insulator MnBi4Te7

Magnetized topological insulator multilayers

Proximity-induced Superconducting Gap in the Intrinsic Magnetic Topological Insulator MnBi2Te4

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices