Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Tunable Spin‐Polarized States in Graphene on a Ferrimagnetic Oxide Insulator (Adv. Mater. 8/2024)

Direct Determination of Spin-Splitting Energy in Magnetic Graphene by Landau Fan Shifts

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Asymmetric Modulation on Exchange Field in a Graphene/BiFeO3 Heterostructure by External Magnetic Field.

Gate-tunable Spin-Galvanic Effect in Graphene Topological insulator van der Waals Heterostructures at Room Temperature

Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure (Adv. Funct. Mater. 11/2024)

Tunable Spin-Orbit Interaction in Trilayer Graphene Exemplified in Electric-Double-Layer Transistors

Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers

Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure

All-electrical creation and control of spin-galvanic signal in graphene and molybdenum ditelluride heterostructures at room temperature

All-Electrical Spin Field Effect Transistor in van der Waals Heterostructures at Room Temperature

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Tunable lateral spin polarization and spin-dependent collimation in velocity-modulated ferromagnetic-gate graphene structures

Spin states modulation of Four-Nitrogen coordinated Transition-Metal (TMN4) embedded graphene

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Spin-Orbit Proximity Effect in Graphene

All-electrical creation and control of giant spin-galvanic effect in 1T-MoTe2/graphene heterostructures at room temperature

Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts

Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature