Strong interface-induced spin-orbit coupling in graphene on WS2

Zhe Wang,Dong-Keun Ki,Hua Chen,Helmuth Berger,Allan H. MacDonald,Alberto F. Morpurgo

DOI: https://doi.org/10.1038/ncomms9339

2015-08-12

Abstract:Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in the band structure of graphene on hexagonal boron nitride (hBN) substrates. Ongoing research strives to explore interfacial interactions in a broader class of materials in order to engineer targeted electronic properties. Here we show that at an interface with a tungsten disulfide (WS2) substrate, the strength of the spin-orbit interaction (SOI) in graphene is very strongly enhanced. The induced SOI leads to a pronounced low-temperature weak anti-localization (WAL) effect, from which we determine the spin-relaxation time. We find that spin-relaxation time in graphene is two-to-three orders of magnitude smaller on WS2 than on SiO2 or hBN, and that it is comparable to the intervalley scattering time. To interpret our findings we have performed first-principle electronic structure calculations, which both confirm that carriers in graphene-on-WS2 experience a strong SOI and allow us to extract a spin-dependent low-energy effective Hamiltonian. Our analysis further shows that the use of WS2 substrates opens a possible new route to access topological states of matter in graphene-based systems.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to induce a significantly enhanced spin - orbit coupling (SOI) in graphene through interface interactions, thereby achieving effective regulation of the electronic properties of graphene and exploring its potential for application in the study of topological states**.

Specifically, the paper focuses on the following aspects:

1. **Enhancing spin - orbit coupling (SOI)**:
- Graphene itself has a very weak spin - orbit coupling, which limits its performance in certain quantum phenomena and device applications. The paper explores whether the SOI can be significantly enhanced through interface interactions when graphene is placed on a tungsten disulfide (WS₂) substrate.
- The authors experimentally observed that in graphene on a WS₂ substrate, the spin relaxation time (\(\tau_{so}\)) is two to three orders of magnitude shorter than that in graphene on SiO₂ or hexagonal boron nitride (hBN) substrates, indicating that the SOI has been significantly enhanced.

2. **Weak anti - localization (WAL) effect**:
- The existence of spin - orbit coupling can be verified through the weak anti - localization effect. Through low - temperature quantum transport measurements, the paper found a significant WAL effect, further confirming the enhancement of SOI.
- By analyzing the WAL data, the authors extracted key parameters such as spin relaxation time and phase coherence time, verifying the phenomenon of enhanced SOI.

3. **Theoretical calculations and models**:
- In order to understand the specific impact of interface interactions on the electronic structure of graphene, the authors carried out first - principles electronic structure calculations. The calculation results show that the electronic states at the graphene/WS₂ interface can be described by an effective Hamiltonian including a spin - orbit coupling term:
\[
H = H_0+\frac{\Delta}{2}\sigma_z+\frac{\lambda}{2}\tau_z s_z+\frac{\lambda_R}{2}(\tau_z\sigma_x s_y - \sigma_y s_x)
\]
Here, \(\sigma\) is the Pauli matrix vector acting on the sub - lattice degrees of freedom of graphene, \(s\) is the Pauli matrix vector acting on spin, and \(\tau_z=\pm1\) represents the K and K' valleys. These additional SOI terms break the inversion symmetry in isolated graphene, resulting in significant spin - orbit coupling.

4. **The possibility of topological insulating states**:
- The paper also discusses whether this strong SOI can be used to achieve topological insulating states in graphene. According to the theoretical model, when the Fermi level is located in the band gap caused by the Rashba term, the system may become a topological insulator. Although the current energy scale is still low, this finding provides a new direction for future research.

In summary, the paper aims to reveal the significant enhancement effect of the WS₂ substrate on the spin - orbit coupling of graphene through a combination of experimental and theoretical methods, and explore its potential applications in realizing topological states and other quantum phenomena.