Tunable Spin-Orbit Coupling and Symmetry-Protected Edge States in Graphene/Ws2

Bowen Yang,Min-Feng Tu,Jeongwoo Kim,Yong Wu,Hui Wang,Jason Alicea,Ruqian Wu,Marc Bockrath,Jing Shi
DOI: https://doi.org/10.1088/2053-1583/3/3/031012
IF: 6.861
2016-01-01
2D Materials
Abstract:We demonstrate clear weak anti-localization (WAL) effect arising from induced Rashba spin-orbit coupling (SOC) in WS2-covered single-layer and bilayer graphene devices. Contrary to the uncovered region of a shared single-layer graphene flake, WAL in WS2-covered graphene occurs over a wide range of carrier densities on both electron and hole sides. At high carrier densities, we estimate the Rashba SOC relaxation rate to be similar to 0.2 ps(-1) and show that it can be tuned by transverse electric fields. In addition to the Rashba SOC, we also predict the existence of a 'valley-Zeeman' SOC from first-principles calculations. The interplay between these two SOC's can open a non-topological but interesting gap in graphene; in particular, zigzag boundaries host four sub-gap edge states protected by time-reversal and crystalline symmetries. The graphene/WS2 system provides a possible platform for these novel edge states.
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