Abstract:The issues of generating and maintaining carrier spin polarization in semiconductors have attracted intense research efforts, not only due to their importance for future applications in spintronics but also due to the intriguing physics underpinning spin-dependent phenomena. Entering the family of semiconductors that exhibit attractive spin-dependent properties, Ga(In)NAs was most recently found to exhibit strong spin polarization of conducting electrons at room temperature upon N incorporation with an extremely long apparent spin lifetime. In this work we have uncovered the origin of the astonishing effect as being due to strong spin dependent recombination (SDR) via defects, by a combination of optical orientation and optically detected magnetic resonance (ODMR) studies. We were able to identify Ga self-interstitials and an As antisite complex to be the dominant defects participating in the SDR process. The involvement of these defects were unambiguously established by their unique spin-resonance signatures derived from the hyperfine interaction between the localized unpaired electron spin and nuclear spins (I=3/2) of the As and Ga atom - the core of the defects. These defects dominate in carrier capture and recombination leading to the observed strong dynamic polarization of electron spins. Further confirmation was found by the effects of growth conditions and post-growth treatments on the defect density that were closely correlated with the electron spin polarization.

Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves

Modulating Room Temperature Spin Injection into GaN Towards the High-Efficiency Spin-Light Emitting Diodes

Lateral Spin Injection in Germanium Nanowires

Electrical Detection of Spin Precession in Single Layer Graphene Spin Valves with Transparent Contacts

Spin Injection into Heavily-Doped N-Gan Via Schottky Barrier

All-Electrical Measurements of Direct Spin Hall Effect in Gaas with Esaki Diode Electrodes

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.

Spin-dependent transport in GaAs nanowire-based devices

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Spin transport study in a Rashba spin-orbit coupling system

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Spin Relaxation Induced by Interfacial Effects in N-Gan/mgo/co Spin Injectors

Room temperature Giant Spin-dependent Photoconductivity in dilute nitride semiconductors

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Enhancement of spin accumulation in few-layer graphene lateral spin valve

Room temperature optically detected magnetic resonance of single spins in GaN

Lateral spin injection and detection through electrodeposited Fe/GaAs contacts

Spin injection and detection in MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral non-local spin valve measurement at varied temperature

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures