Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves

T. A. Peterson,S. J. Patel,C. C. Geppert,K. D. Christie,A. Rath,D. Pennachio,M. E. Flatté,P. M. Voyles,C. J. Palmstrøm,P. A. Crowell

DOI: https://doi.org/10.1103/PhysRevB.94.235309

2016-10-13

Abstract:We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $\mu$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $\mu$m spin diffusion length and applying a forward bias to the detector contact. The spin transport parameters are measured by comparing the injector-detector contact separation dependence of the spin valve signal with a numerical model accounting for spin drift and diffusion. The apparent suppression of the spin injection efficiency at the lowest temperatures reflects a breakdown of the ordinary drift-diffusion model in the regime of large spin accumulation. A theoretical calculation of the D'yakonov-Perel spin lifetime agrees well with the measured $n$-GaAs spin lifetime over the entire temperature range.

Mesoscale and Nanoscale Physics