Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Room-Temperature Lateral Spin Valve in Graphene/Fe3GaTe2 Van Der Waals Heterostructures

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe5 GeTe2 /Graphene Heterostructure

Van der Waals Magnet based Spin-Valve Devices at Room Temperature

Room-temperature spin-valve devices without spacer layers based on Fe3GaTe2 van der Waals homojunctions

Room-temperature spin-valve devices based on Fe 3 GaTe 2 /MoS 2 /Fe 3 GaTe 2 2D van der Waals heterojunctions

Nonlocal Spin Valves Based on Graphene/Fe3GeTe2 Van Der Waals Heterostructures

Nonlocal Spin Valves Based on Graphene/Fe 3 GeTe 2 van der Waals Heterostructures

Strong in-plane magnetic anisotropy (Co0.15Fe0.85)5GeTe2/graphene van der Waals heterostructure spin-valve at room temperature

Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices

Room-temperature Spin-Valve Devices Based on Fe3GaTe2/MoS2/Fe3GaTe2 2D Van Der Waals Heterojunctions.

Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 Van Der Waals Heterostructures.

Fe3GaTe2/MoSe2 Ferromagnet/Semiconductor 2D van der Waals Heterojunction for Room-Temperature Spin-Valve Devices

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Strong In-Plane Magnetization and Spin Polarization in (Co 0.15 Fe 0.85 ) 5 GeTe 2 /Graphene van der Waals Heterostructure Spin-Valve at Room Temperature

A seamless graphene spin valve based on proximity to van der Waals magnet Cr$_2$Ge$_2$Te$_6$

Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization

Spin Injection Properties In Trilayer Graphene Lateral Spin Valves