Demonstration Of Spin Valve Effects In Silicon Nanowires

jean tarun,shaoyun huang,yasuhiro fukuma,hiroshi idzuchi,yoshichika otani,naoki fukata,koji ishibashi,shunri oda
DOI: https://doi.org/10.1063/1.3562904
IF: 2.877
2011-01-01
Journal of Applied Physics
Abstract:We have successfully demonstrated a lateral spin valve device using a silicon nanowire for the nonmagnetic channel. Low-temperature transport measurements with in-plane magnetic field were performed in both local and nonlocal configurations. Hysteretic behavior was observed in the local magnetoresistance curves, with a maximum change of 0.18% at 2.4 K. The shape of the magnetoresistance curves indicates spin valve behavior with two switching fields. In the nonlocal voltage configuration, distinct dips were observed when the injector and detector contacts had antiparallel magnetization states. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562904]
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