Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire–Permalloy Lateral Spin Valve System

jean tarun,shaoyun huang,yasuhiro fukuma,hiroshi idzuchi,yoshichika otani,naoki fukata,koji ishibashi,shunri oda
DOI: https://doi.org/10.1143/APEX.5.045001
IF: 2.819
2012-01-01
Applied Physics Express
Abstract:A huge nonlocal spin valve signal over 700 Omega has been observed in silicon-nanowire-based lateral spin valve with permalloy electrodes. The magnitude of the observed huge spin signal was quantitatively explained using the conventional spin diffusion model in a one-dimensionally confined silicon channel. From the temperature dependence of the spin signal, the interface spin polarization was found to be strongly depolarized by raising the temperature. This special characteristic can be reasonably explained by considering an increase in the tunneling of thermally activated electrons through the Schottky barrier with an extremely thin depletion layer. (C) 2012 The Japan Society of Applied Physics
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