Spin injection and spin accumulation in all-metal mesoscopic spin valves

F.J. Jedema,M.S. Nijboer,A.T. Filip,B.J. van Wees

DOI: https://doi.org/10.1103/PhysRevB.67.085319

2002-07-26

Abstract:We study the electrical injection and detection of spin accumulation in lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, permalloy (Py), cobalt (Co) and nickel (Ni), are used as electrical spin injectors and detectors. For the nonmagnetic metal both aluminium (Al) and copper (Cu) are used. Our multi-terminal geometry allows us to experimentally separate the spin valve effect from other magneto resistance signals such as the anomalous magneto resistance (AMR) and Hall effects. We find that the AMR contribution of the ferromagnetic contacts can dominate the amplitude of the spin valve effect, making it impossible to observe the spin valve effect in a 'conventional' measurement geometry. In a 'non local' spin valve measurement we are able to completely isolate the spin valve signal and observe clear spin accumulation signals at T=4.2 K as well as at room temperature (RT). For aluminum we obtain spin relaxation lengths (lambda_{sf}) of 1.2 mu m and 600 nm at T=4.2 K and RT respectively, whereas for copper we obtain 1.0 mu m and 350 nm. The spin relaxation times tau_{sf} in Al and Cu are compared with theory and results obtained from giant magneto resistance (GMR), conduction electron spin resonance (CESR), anti-weak localization and superconducting tunneling experiments. The spin valve signals generated by the Py electrodes (alpha_F lambda_F=0.5 [1.2] nm at RT [T=4.2 K]) are larger than the Co electrodes (alpha_F lambda_F=0.3 [0.7] nm at RT [T=4.2 K]), whereas for Ni (alpha_F lambda_F<0.3 nm at RT and T=4.2 K) no spin signal is observed. These values are compared to the results obtained from GMR experiments.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about how to achieve effective spin injection and detection of spin accumulation in all - metal mesoscopic spin valves. Specifically, the research focuses on the problem of electrical spin injection and spin accumulation detection through transparent interfaces in lateral ferromagnetic - metal - non - magnetic - metal - ferromagnetic - metal (F/N/F) spin - valve devices.

### Research Background and Problems
1. **Requirements in the Field of Spintronics**
Spintronics is a rapidly developing field aiming to study or utilize the spin degree of freedom of electrons. The most well - known examples include the giant magnetoresistance effect (GMR) and the tunnel magnetoresistance effect (TMR). However, most of these studies focus on multilayer or multi - junction structures, while this paper focuses on how to achieve the injection, transmission, and detection of spin current in a single device.

2. **Limitations of Existing Technologies**
- In traditional measurement geometries, the anomalous magnetoresistance (AMR) and other magnetoresistance signals (such as the Hall effect) may mask the spin - valve effect, making it difficult to accurately observe spin accumulation.
- A method that can effectively separate these signals is required to ensure clear observation of the spin - valve effect.

3. **Experimental Challenges**
- How to achieve effective detection of spin accumulation at different temperatures (especially at room temperature and low temperature).
- The influence of different materials (such as Py, Co, Ni as ferromagnetic materials, and Al and Cu as non - magnetic materials) on spin injection and accumulation.

### Main Objectives of the Paper
1. **Verify the Existence of Spin Accumulation**
By using a multi - terminal geometry, the researchers hope to observe clear spin - accumulation signals at room temperature (RT) and low temperature (4.2 K), and verify whether these signals can be separated by experimental means.

2. **Understand Spin Relaxation Length and Time**
Measure the spin - relaxation length (\(\lambda_{sf}\)) and spin - relaxation time (\(\tau_{sf}\)) in different materials, and compare them with theoretical predictions and other experimental results (such as GMR, CESR, etc.).

3. **Improve Measurement Methods**
Propose and verify a "non - local" spin - valve measurement method to completely isolate the spin - valve signal and avoid the interference of AMR and other magnetoresistance signals in traditional measurement methods.

### Formula Summary
- Spin - relaxation length: \(\lambda_{sf}=\sqrt{D\tau_{sf}}\)
- Spin - relaxation time: \(\frac{1}{\tau_{sf}}=\frac{1}{\tau_{↑↓}}+\frac{1}{\tau_{↓↑}}\)
- Spin - polarization rate: \(\alpha_F = \frac{\sigma_{↑}-\sigma_{↓}}{\sigma_{↑}+\sigma_{↓}}\)

By solving these problems, the researchers hope to provide a deeper understanding and technical support for future spintronics applications.