Spin-dependent Seebeck effect in non-local spin valve devices

Mikhail Erekhinsky,Fèlix Casanova,Ivan K. Schuller,Amos Sharoni
DOI: https://doi.org/10.1063/1.4717752
2018-11-15
Abstract:We performed measurements of Py/Cu and Py/Ag lateral spin valves as function of injection current direction and magnitude. Above a 'critical' current, there is an unexpected dependence of spin injection on current direction. Positive currents show higher polarization of spin injection than negative. This implies that in addition to current-induced spin injection, there is a thermally induced injection from a spin-dependent Seebeck effect. A temperature gradient in the Py electrode, caused by Joule heating, is responsible for injecting excess spins into the non-magnetic channel. This effect has important consequences for understanding high-current spin-based devices, such as spin transfer torque devices.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the influence of current direction and magnitude on spin injection in non - local spin - valve devices, and to reveal the asymmetry phenomenon that occurs at high current densities. Specifically, the researchers observed that when exceeding a certain "critical" current, spin injection shows a dependence on the current direction: the forward current shows a higher degree of spin polarization than the negative current. This phenomenon implies that in addition to current - induced spin injection, there is also thermally - induced spin injection caused by the spin - dependent Seebeck effect. ### Research Background and Problems 1. **Background**: - In spintronics devices, especially in high - current - density applications (such as spin - transfer - torque random - access memory), thermal effects may produce unexpected temperature gradients, thereby affecting device performance. - In recent years, the interactions among electrical, spin, and thermal (or entropy) transports have attracted wide attention, and these effects are collectively known as "spin - caloritronics", including thermal spin - transfer torque, spin Nernst effect, spin Peltier effect, and spin Seebeck effect, etc. 2. **Problems**: - Why does spin injection show a strong dependence on the current direction at high current densities? - Can this asymmetry be attributed to thermal effects, especially the spin - dependent Seebeck effect? ### Experimental Findings Through experimental measurements, the researchers found: - At a high current density (approximately \(4.5\times10^{11}\, \text{A/m}^2\)), spin injection is stronger for the forward current than for the negative current. - This asymmetry cannot be simply explained by Joule heating, but is more likely to be caused by thermally - induced spin injection due to the spin - dependent Seebeck effect. ### Explanation and Model The researchers proposed a reasonable explanation: Joule heating generates a temperature gradient in the ferromagnetic electrode (Py), resulting in additional thermally - induced spin injection. According to the formula for the spin - dependent Seebeck effect: \[ J_{S_S}=-\frac{(1 - \alpha_{FM}^2)S_{SF_M}\nabla T}{2\rho_{FM}} \] where: - \(J_{S_S}\) is the thermally - induced spin current, - \(S_{SF_M}\) is the spin Seebeck coefficient of the ferromagnetic material, - \(\nabla T\) is the temperature gradient, - \(\rho_{FM}\) is the resistivity of the ferromagnetic material. For the forward current, the effective spin injection \(J_S^+\) is the sum of the electrically - injected spin current and the thermally - induced spin current; for the negative current, the effective spin injection \(J_S^-\) is the electrically - extracted spin current minus the thermally - induced spin current. Therefore, the spin accumulation under the forward current is greater than that under the negative current. ### Conclusion This study shows that at high current densities, thermally - induced spin injection has a significant impact on the behavior of spintronic devices, which provides important theoretical and experimental bases for understanding and developing high - performance spintronic devices.